Matthew J. Davies
Matthew J. Davies
Attolight AG
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα attolight.com
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Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
642015
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 112110, 2014
432014
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ...
Applied Physics Letters 113 (7), 071107, 2018
382018
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
MJ Davies, TJ Badcock, P Dawson, MJ Kappers, RA Oliver, ...
Applied Physics Letters 102 (2), 022106, 2013
362013
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ...
physica status solidi (b) 252 (5), 928-935, 2015
242015
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
TJ Badcock, P Dawson, MJ Davies, MJ Kappers, FCP Massabuau, ...
Journal of Applied Physics 115 (11), 113505, 2014
222014
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
MJ Davies, P Dawson, FCP Massabuau, RA Oliver, MJ Kappers, ...
Applied Physics Letters 105 (9), 092106, 2014
212014
A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures
MJ Davies, P Dawson, FCP Massabuau, AL Fol, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 866-872, 2015
182015
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ...
Applied Physics Letters 108 (25), 252101, 2016
172016
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
MJ Davies, FCP Massabuau, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (c) 11 (3‐4), 710-713, 2014
162014
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
C Frankerl, MP Hoffmann, F Nippert, H Wang, C Brandl, N Tillner, ...
Journal of Applied Physics 126 (7), 075703, 2019
152019
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ...
Journal of Applied Physics 119 (5), 055708, 2016
152016
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ...
Applied Physics Letters 109 (22), 223102, 2016
122016
The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
MJ Davies, P Dawson, FCP Massabuau, F Oehler, RA Oliver, MJ Kappers, ...
physica status solidi (c) 11 (3‐4), 750-753, 2014
112014
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ...
physica status solidi (c) 13 (5‐6), 248-251, 2016
102016
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ...
Science and Technology of advanced MaTerialS 17 (1), 736-743, 2016
92016
Carrier distributions in InGaN/GaN light‐emitting diodes
S Hammersley, MJ Davies, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 890-894, 2015
52015
Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates
C Frankerl, F Nippert, MP Hoffmann, H Wang, C Brandl, HJ Lugauer, ...
Journal of Applied Physics 127 (9), 095701, 2020
42020
Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
C Frankerl, F Nippert, A Gomez-Iglesias, MP Hoffmann, C Brandl, ...
Applied Physics Letters 117 (10), 102107, 2020
32020
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy
A Dunn, BF Spencer, SJO Hardman, DM Graham, S Hammersley, ...
physica status solidi (c) 13 (5‐6), 252-255, 2016
32016
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