Pecz B
Pecz B
Άγνωστη συνεργασία
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα
Παρατίθεται από
Παρατίθεται από
Amorphisation and surface morphology development at low-energy ion milling
A Barna, B Pécz, M Menyhard
Ultramicroscopy 70 (3), 161-171, 1998
Nickel based ohmic contacts on SiC
T Marinova, A Kakanakova-Georgieva, V Krastev, R Kakanakov, ...
Materials Science and Engineering: B 46 (1-3), 223-226, 1997
Tracks induced by swift heavy ions in semiconductors
G Szenes, ZE Horvath, B Pecz, F Paszti, L Toth
Physical Review B 65 (4), 045206, 2002
The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
Realization of vertical and zigzag single crystalline silicon nanowire architectures
VA Sivakov, G Bronstrup, B Pecz, A Berger, GZ Radnoczi, M Krause, ...
The Journal of Physical Chemistry C 114 (9), 3798-3803, 2010
TEM sample preparation by ion milling/amorphization
A Barna, B Pécz, M Menyhard
Micron 30 (3), 267-276, 1999
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 7, 2002
Crystallization of amorphous-Si films by flash lamp annealing
B Pécz, L Dobos, D Panknin, W Skorupa, C Lioutas, N Vouroutzis
Applied Surface Science 242 (1-2), 185-191, 2005
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Toth, B Pecz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
Early stages of growth of β-SiC on Si by MBE
K Zekentes, V Papaioannou, B Pecz, J Stoemenos
Journal of Crystal growth 157 (1-4), 392-399, 1995
Contact formation in SiC devices
B Pecz
Applied Surface Science 184 (1-4), 287-294, 2001
Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC
B Pécz, L Tóth, MA di Forte-Poisson, J Vacas
Applied Surface Science 206 (1-4), 8-11, 2003
Epitaxial lateral overgrowth of GaN on Si (111)
E Feltin, B Beaumont, P Vennéguès, M Vaille, P Gibart, T Riemann, ...
Journal of Applied Physics 93 (1), 182-185, 2003
V-shaped defects connected to inversion domains in AlGaN layers
B Pécz, Z Makkai, MA di Forte-Poisson, F Huet, RE Dunin-Borkowski
Applied Physics Letters 78 (11), 1529-1531, 2001
Characterization of ZnO: Al/Au/ZnO: Al trilayers for high performance transparent conducting electrodes
T Dimopoulos, GZ Radnoczi, B Pécz, H Brückl
Thin Solid Films 519 (4), 1470-1474, 2010
Structure of sputtered nanocomposite thin films
G Gassner, J Patscheider, PH Mayrhofer, E Hegedus, L Toth, I Kovacs, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
Catalytic probe of the surface statistics of palladium crystallites deposited on montmorillonite
B Veisz, Z Király, L Tóth, B Pécz
Chemistry of materials 14 (7), 2882-2888, 2002
Diamond overgrown InAlN/GaN HEMT
M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ...
Diamond and Related Materials 20 (4), 604-608, 2011
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ...
Journal of applied physics 96 (1), 799-806, 2004
Tin dioxide sol–gel derived thin films deposited on porous silicon
C Cobianu, C Savaniu, O Buiu, D Dascalu, M Zaharescu, C Parlog, ...
Sensors and Actuators B: Chemical 43 (1-3), 114-120, 1997
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–20