| Mechanical aspects of the chemical mechanical polishing process: A review H Lee, D Lee, H Jeong International journal of precision engineering and manufacturing 17, 525-536, 2016 | 116 | 2016 |
| Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing (CMP) processes HS Lee, HD Jeong, DA Dornfeld Precision Engineering 37 (2), 483-490, 2013 | 112 | 2013 |
| Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces HS Lee, HD Jeong CIRP annals 58 (1), 485-490, 2009 | 109 | 2009 |
| Slurry components in metal chemical mechanical planarization (CMP) process: A review D Lee, H Lee, H Jeong International Journal of Precision Engineering and Manufacturing 17, 1751-1762, 2016 | 100 | 2016 |
| Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS) HS Lee, DI Kim, JH An, HJ Lee, KH Kim, H Jeong CIRP annals 59 (1), 333-336, 2010 | 99 | 2010 |
| Approaches to sustainability in chemical mechanical polishing (CMP): a review H Lee, H Kim, H Jeong International Journal of Precision Engineering and Manufacturing-Green …, 2022 | 68 | 2022 |
| Mechanical effect of colloidal silica in copper chemical mechanical planarization H Lee, S Joo, H Jeong Journal of Materials Processing Technology 209 (20), 6134-6139, 2009 | 68 | 2009 |
| Pad roughness variation and its effect on material removal profile in ceria-based CMP slurry B Park, H Lee, K Park, H Kim, H Jeong journal of materials processing technology 203 (1-3), 287-292, 2008 | 52 | 2008 |
| Macroscopic and microscopic investigation on chemical mechanical polishing of sapphire wafer H Lee, H Lee, H Jeong, S Choi, Y Lee, M Jeong, H Jeong Journal of Nanoscience and Nanotechnology 12 (2), 1256-1259, 2012 | 50 | 2012 |
| Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard–brittle materials used in light-emitting diodes H Lee, H Kasuga, H Ohmori, H Lee, H Jeong Journal of crystal growth 326 (1), 140-146, 2011 | 50 | 2011 |
| Investigation of pad wear in CMP with swing-arm conditioning and uniformity of material removal H Lee, S Lee Precision Engineering 49, 85-91, 2017 | 38 | 2017 |
| Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization H Lee, B Park, H Jeong Journal of Materials Processing Technology 209 (4), 1729-1735, 2009 | 38 | 2009 |
| Mathematical model-based evaluation methodology for environmental burden of chemical mechanical planarization process H Lee, DA Dornfeld, H Jeong International Journal of Precision Engineering and Manufacturing-Green …, 2014 | 31 | 2014 |
| Tribology research trends in chemical mechanical polishing (CMP) process H Lee Tribology and Lubricants 34 (3), 115-122, 2018 | 28 | 2018 |
| Effect of pad groove geometry on material removal characteristics in chemical mechanical polishing Y Guo, H Lee, Y Lee, H Jeong International Journal of Precision Engineering and Manufacturing 13, 303-306, 2012 | 25 | 2012 |
| The effects of a spray slurry nozzle on copper CMP for reduction in slurry consumption D Lee, H Lee, H Jeong Journal of Mechanical Science and Technology 29, 5057-5062, 2015 | 23 | 2015 |
| Effect of wafer size on material removal rate and its distribution in chemical mechanical polishing of silicon dioxide film H Lee, Y Park, S Lee, H Jeong Journal of Mechanical Science and Technology 27, 2911-2916, 2013 | 23 | 2013 |
| Evaluation of environmental impacts during chemical mechanical polishing (CMP) for sustainable manufacturing H Lee, S Park, H Jeong Journal of Mechanical Science and Technology 27, 511-518, 2013 | 22 | 2013 |
| Experimental investigation of material removal characteristics in silicon chemical mechanical polishing B Park, S Jeong, H Lee, H Kim, H Jeong, DA Dornfeld Japanese Journal of Applied Physics 48 (11R), 116505, 2009 | 22 | 2009 |
| Effect of additives for higher removal rate in lithium niobate chemical mechanical planarization S Jeong, H Lee, H Cho, S Lee, H Kim, S Kim, J Park, H Jeong Applied surface science 256 (6), 1683-1688, 2010 | 21 | 2010 |
