Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell F Azri, A Meftah, N Sengouga, A Meftah Solar energy 181, 372-378, 2019 | 342 | 2019 |
Extraction of ZnO thin film parameters for modeling a ZnO/Si solar cell S Chala, N Sengouga, F Yakuphanoğlu, S Rahmane, M Bdirina, İ Karteri Energy 164, 871-880, 2018 | 52 | 2018 |
Comparative study of conventional and inverted P3HT: PCBM organic solar cell M Abdallaoui, N Sengouga, A Chala, AF Meftah, AM Meftah Optical Materials 105, 109916, 2020 | 45 | 2020 |
Modeling a Ni/â-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering M Labed, N Sengouga, M Labed, A Meftah, S Kyoung, H Kim, YS Rim Journal of Physics D: Applied Physics 54 (11), 115102, 2021 | 30 | 2021 |
Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes W Filali, N Sengouga, S Oussalah, RH Mari, D Jameel, NA Al Saqri, ... Superlattices and Microstructures 111, 1010-1021, 2017 | 30 | 2017 |
Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey TE Taouririt, A Meftah, N Sengouga, M Adaika, S Chala, A Meftah Nanoscale 11 (48), 23459-23474, 2019 | 29 | 2019 |
Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics A Saadoune, L Dehimi, N Sengouga, M McPherson, BK Jones Solid-state electronics 50 (7-8), 1178-1182, 2006 | 28 | 2006 |
Effect of the source solution quantity on optical characteristics of ZnO and NiO thin films grown by spray pyrolysis for the design NiO/ZnO photodetectors H Hakkoum, T Tibermacine, N Sengouga, O Belahssen, M Ghougali, ... Optical Materials 108, 110434, 2020 | 27 | 2020 |
Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors M Adaika, A Meftah, N Sengouga, M Henini Vacuum 120, 59-67, 2015 | 26 | 2015 |
Low Temperature Modeling of Ni/â-Ga2O3 Schottky Barrier Diode Interface M Labed, JH Park, A Meftah, N Sengouga, JY Hong, YK Jung, YS Rim ACS Applied Electronic Materials 3 (8), 3667-3673, 2021 | 23 | 2021 |
Modeling the effect of 1 MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells A Hamache, N Sengouga, A Meftah, M Henini Radiation Physics and Chemistry 123, 103-108, 2016 | 22 | 2016 |
Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode K Zeghdar, L Dehimi, A Saadoune, N Sengouga Journal of Semiconductors 36 (12), 124002, 2015 | 22 | 2015 |
Modeling and analyzing temperature-dependent parameters of Ni/â-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering M Labed, N Sengouga, M Labed, A Meftah, S Kyoung, H Kim, YS Rim Semiconductor Science and Technology 36 (3), 035020, 2021 | 21 | 2021 |
Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT TE Taouririt, A Meftah, N Sengouga Applied Nanoscience 8, 1865-1875, 2018 | 20 | 2018 |
Leakage current modelling and optimization of â-Ga 2 O 3 Schottky barrier diode with Ni contact under high reverse voltage M Labed, N Sengouga, A Meftah, M Labed, S Kyoung, H Kim, YS Rim ECS Journal of Solid State Science and Technology 9 (12), 125001, 2020 | 19 | 2020 |
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded â-Ga2O3 Schottky barrier diode CV Prasad, JH Park, JY Min, W Song, M Labed, Y Jung, S Kyoung, S Kim, ... Materials Today Physics 30, 100932, 2023 | 18 | 2023 |
Modeling the effect of defects on the performance of an n-CdO/p-Si solar cell S Chala, N Sengouga, F Yakuphanoglu Vacuum 120, 81-88, 2015 | 18 | 2015 |
Numerical simulation of the effect of recombination centres and traps created by electron irradiation on the performance degradation of GaAs solar cells AF Meftah, N Sengouga, A Belghachi, AM Meftah Journal of Physics: Condensed Matter 21 (21), 215802, 2009 | 18 | 2009 |
Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristics L Dehimi, N Sengouga, BK Jones Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004 | 17 | 2004 |
Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell M Labed, N Sengouga, A Meftah, A Meftah, YS Rim Optical Materials 120, 111453, 2021 | 16 | 2021 |