eric p kvam
eric p kvam
Professor, Materials Engineering, Purdue University
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα
Παρατίθεται από
Παρατίθεται από
Dislocation nucleation near the critical thickness in GeSi/Si strained layers
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
Variation of dislocation morphology with strain in GexSi1− x epilayers on (100) Si
EP Kvam, DM Maher, CJ Humphreys
Journal of Materials Research 5 (9), 1900-1907, 1990
Surface orientation and stacking fault generation in strained epitaxial growth
EP Kvam, R Hull
Journal of applied physics 73 (11), 7407-7411, 1993
Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions
C Varanasi, PJ McGinn, V Pavate, EP Kvam
Physica C: Superconductivity 221 (1-2), 46-52, 1994
New Source of Dislocations in Strained Epitaxial Layers
DJ Eaglesham, DM Maher, EP Kvam, JC Bean, CJ Humphreys
Physical review letters 62 (2), 187, 1989
X‐ray topography of the coherency breakdown in GexSi1−x/Si(100)
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, GS Green, ...
Applied physics letters 53 (21), 2083-2085, 1988
Development of epitaxial AlxSc1−xN for artificially structured metal/semiconductor superlattice metamaterials
B Saha, S Saber, GV Naik, A Boltasseva, EA Stach, EP Kvam, TD Sands
physica status solidi (b) 252 (2), 251-259, 2015
Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy
MA Capano, BC Kim, AR Smith, EP Kvam, S Tsoi, AK Ramdas
Journal of applied physics 100 (8), 083514, 2006
JC Bean, GS Green, and BK Tanner
EP Kvam, DJ Eaglesham, DM Maher, CJ Humphreys
Mat. Res. So-. Symp. Proc. 104 623, 1988
Microscopy of Semiconducting Materials 1987
EP Kvam, DJ Eaglesham, CJ Humphreys, DM Maher, JC Bean, HL Fraser, ...
Institute of Physics Conference Series, 165, 1987
Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon
H Wong, J Lou, NW Cheung, EP Kvam, KM Yu, DA Olson, J Washburn
Applied physics letters 57 (8), 798-800, 1990
Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold
EP Kvam, RW Balluffi
Philosophical Magazine A 56 (1), 137-148, 1987
Synthesis and optimization of a new starch-based adsorbent for dehumidification of air in a pressure-swing dryer
LE Anderson, M Gulati, PJ Westgate, EP Kvam, K Bowman, MR Ladisch
Industrial & engineering chemistry research 35 (4), 1180-1187, 1996
Deformation induced defects in ReBa2Cu3O7− δ
MJ Kramer, LS Chumbley, RW McCallum, WJ Nellis, S Weir, EP Kvam
Physica C: Superconductivity 166 (1-2), 115-124, 1990
Possible dislocation multiplication source in (001) semiconductor epitaxy
J Washburn, EP Kvam
Applied physics letters 57 (16), 1637-1639, 1990
Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox
C Varanasi, PJ McGinn, V Pavate, EP Kvam
Journal of materials research 10 (9), 2251-2256, 1995
Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy
A Zanota, EP Kvam, D Balkin, PJ McGinn
Applied physics letters 62 (21), 2722-2724, 1993
Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface
V Gopal, EP Kvam, TP Chin, JM Woodall
Applied physics letters 72 (18), 2319-2321, 1998
The origin of dislocations in multilayers
CJ Humphreys, DM Maher, DJ Eaglesham, EP Kvam, IG Salisbury
Journal de Physique III 1 (6), 1119-1130, 1991
Effect of enzyme modification of corn grits on their properties as an adsorbent in a skarstrom pressure swing cycle dryer
KE Beery, M Gulati, EP Kvam, MR Ladisch
Adsorption 4 (3), 321-335, 1998
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–20