Al-Moatasem El-Sayed
Al-Moatasem El-Sayed
Nanolayers Research Computing Ltd. & Technical University of Vienna
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Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ...
Microelectronics Reliability 87, 286-320, 2018
Nature of intrinsic and extrinsic electron trapping in SiO 2
AM El-Sayed, MB Watkins, VV Afanas' ev, AL Shluger
Physical Review B 89 (12), 125201, 2014
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
Hydrogen-induced rupture of strained Si─ O bonds in amorphous silicon dioxide
AM El-Sayed, MB Watkins, T Grasser, VV Afanas’ev, AL Shluger
Physical review letters 114 (11), 115503, 2015
Theoretical models of hydrogen-induced defects in amorphous silicon dioxide
AM El-Sayed, Y Wimmer, W Goes, T Grasser, VV Afanas' ev, AL Shluger
Physical Review B 92 (1), 014107, 2015
Intrinsic charge trapping in amorphous oxide films: status and challenges
J Strand, M Kaviani, D Gao, AM El-Sayed, VV Afanas’ ev, AL Shluger
Journal of Physics: Condensed Matter 30 (23), 233001, 2018
Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices
Y Wimmer, AM El-Sayed, W Gös, T Grasser, AL Shluger
Proceedings of the Royal Society A: Mathematical, Physical and Engineering …, 2016
A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection
DZ Gao, AM El-Sayed, AL Shluger
Nanotechnology 27 (50), 505207, 2016
Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes
T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015
Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations
AM El-Sayed, MB Watkins, AL Shluger, VV Afanas’ev
Microelectronic engineering 109, 68-71, 2013
On the volatility of oxide defects: Activation, deactivation, and transformation
T Grasser, M Waltl, W Goes, Y Wimmer, AM El-Sayed, AL Shluger, ...
2015 IEEE International Reliability Physics Symposium, 5A. 3.1-5A. 3.8, 2015
treatment of silicon-hydrogen bond rupture at interfaces
M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser
Physical Review B 100 (19), 195302, 2019
Effect of electric field on migration of defects in oxides: Vacancies and interstitials in bulk MgO
AM El-Sayed, MB Watkins, T Grasser, AL Shluger
Physical Review B 98 (6), 064102, 2018
The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
T Grasser, M Waltl, G Rzepa, W Goes, Y Wimmer, AM El-Sayed, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 5A-2-1-5A-2-8, 2016
Optical signatures of intrinsic electron localization in amorphous SiO2
AM El-Sayed, K Tanimura, AL Shluger
Journal of Physics: Condensed Matter 27 (26), 265501, 2015
A computational study of Si–H bonds as precursors for neutral E′ centres in amorphous silica and at the Si/SiO2 interface
S Ling, AM El-Sayed, F Lopez-Gejo, MB Watkins, VV Afanas’ev, ...
Microelectronic engineering 109, 310-313, 2013
Hole trapping at hydrogenic defects in amorphous silicon dioxide
AM El-Sayed, MB Watkins, T Grasser, VV Afanas’ev, AL Shluger
Microelectronic Engineering 147, 141-144, 2015
Atomistic modeling of oxide defects
D Waldhoer, AMB El-Sayed, Y Wimmer, M Waltl, T Grasser
Noise in Nanoscale Semiconductor Devices, 609-648, 2020
Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture
C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
Microelectronics Reliability 139, 114801, 2022
Single-versus multi-step trap assisted tunneling currents—Part II: The role of polarons
C Schleich, D Waldhör, AM El-Sayed, K Tselios, B Kaczer, T Grasser, ...
IEEE Transactions on Electron Devices 69 (8), 4486-4493, 2022
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