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US Patent 7,727,332, 2010
427 2010 The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
367 2020 Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 2012
195 2012 Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates T Wunderer, CL Chua, Z Yang, JE Northrup, NM Johnson, GA Garrett, ...
Applied Physics Express 4 (9), 092101, 2011
127 2011 Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks J Hertkorn, F Lipski, P Brückner, T Wunderer, SB Thapa, F Scholz, ...
Journal of Crystal Growth 310 (23), 4867-4870, 2008
109 2008 Differential phase contrast 2.0—Opening new “fields” for an established technique M Lohr, R Schregle, M Jetter, C Wächter, T Wunderer, F Scholz, J Zweck
Ultramicroscopy 117, 7-14, 2012
104 2012 Optically pumped UV lasers grown on bulk AlN substrates T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
94 2012 Piezoelectric fields in GaInN∕ GaN quantum wells on different crystal facets M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ...
Applied Physics Letters 89 (24), 2006
89 2006 Optimization of nucleation and buffer layer growth for improved GaN quality J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ...
Journal of Crystal Growth 308 (1), 30-36, 2007
88 2007 Bright semipolar GaInN∕ GaN blue light emitting diode on side facets of selectively grown GaN stripes T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ...
Applied physics letters 89 (4), 2006
85 2006 Three‐dimensional GaN for semipolar light emitters T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ...
physica status solidi (b) 248 (3), 549-560, 2011
83 2011 Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters B Cheng, S Choi, JE Northrup, Z Yang, C Knollenberg, M Teepe, ...
Applied Physics Letters 102 (23), 2013
71 2013 I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ...
Physical Review B 83 (3), 035314, 2011
64 2011 Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions B Neuschl, K Thonke, M Feneberg, R Goldhahn, T Wunderer, Z Yang, ...
Applied Physics Letters 103 (12), 2013
49 2013 Growth and coalescence behavior of semipolar (11̄22) GaN on pre‐structured r‐plane sapphire substrates S Schwaiger, S Metzner, T Wunderer, I Argut, J Thalmair, F Lipski, ...
physica status solidi (b) 248 (3), 588-593, 2011
49 2011 Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction JE Northrup, C Chua, M Kneissl, T Wunderer, NM Johnson
US Patent 9,252,329, 2016
48 2016 Shroud for disk drive with particulate filter elements GJ Smith
US Patent 6,654,201, 2003
48 * 2003 P-side layers for short wavelength light emitters JE Northrup, B Cheng, CL Chua, T Wunderer, NM Johnson, Z Yang
US Patent 9,401,452, 2016
46 2016 P-side layers for short wavelength light emitters JE Northrup, B Cheng, CL Chua, T Wunderer, NM Johnson, Z Yang
US Patent 9,401,452, 2016
46 2016 Planar semipolar (101¯ 1) GaN on (112¯ 3) sapphire S Schwaiger, I Argut, T Wunderer, R Rösch, F Lipski, J Biskupek, U Kaiser, ...
Applied Physics Letters 96 (23), 2010
44 2010 