Spin torque switching of perpendicular Ta∣ CoFeB∣ MgO-based magnetic tunnel junctions DC Worledge, G Hu, DW Abraham, JZ Sun, PL Trouilloud, J Nowak, ...
Applied physics letters 98 (2), 2011
829 2011 Magnetic multilayers on nanospheres M Albrecht, G Hu, IL Guhr, TC Ulbrich, J Boneberg, P Leiderer, G Schatz
Nature Materials 4 (3), 203-206, 2005
427 2005 Intrinsic distribution of magnetic anisotropy in thin films probed by patterned nanostructures T Thomson, G Hu, BD Terris
Physical Review Letters 96 (25), 257204, 2006
379 2006 Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ O’Sullivan, DW Abraham, ...
Applied Physics Letters 100 (13), 2012
359 2012 Negative Spin Polarization of G Hu, Y Suzuki
Physical review letters 89 (27), 276601, 2002
326 2002 Effect of subvolume excitation and spin-torque efficiency on magnetic switching JZ Sun, RP Robertazzi, J Nowak, PL Trouilloud, G Hu, DW Abraham, ...
Physical Review B 84 (6), 064413, 2011
201 2011 Patterned media for future magnetic data storage BD Terris, T Thomson, G Hu
Microsystem technologies 13, 189-196, 2007
193 2007 Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ...
IEEE Magnetics Letters 7, 1-4, 2016
169 2016 Magnetization reversal in a novel gradient nanomaterial TC Ulbrich, D Makarov, G Hu, IL Guhr, D Suess, T Schrefl, M Albrecht
Physical review letters 96 (7), 077202, 2006
124 2006 Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ...
Physical review B 88 (10), 104426, 2013
122 2013 Magnetic dot arrays with multiple storage layers M Albrecht, G Hu, A Moser, O Hellwig, BD Terris
Journal of Applied Physics 97 (10), 2005
111 2005 Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy JJ Nowak, RP Robertazzi, JZ Sun, G Hu, DW Abraham, PL Trouilloud, ...
IEEE Magnetics Letters 2, 3000204-3000204, 2011
103 2011 STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015
95 2015 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory G Hu, JJ Nowak, PL Troilloud, DC Worledge
US Patent App. 13/093,287, 2012
93 2012 A three-terminal spin-torque-driven magnetic switch JZ Sun, MC Gaidis, EJ O’Sullivan, EA Joseph, G Hu, DW Abraham, ...
Applied physics letters 95 (8), 2009
90 2009 Switching distributions and write reliability of perpendicular spin torque MRAM DC Worledge, G Hu, PL Trouilloud, DW Abraham, S Brown, MC Gaidis, ...
2010 International Electron Devices Meeting, 12.5. 1-12.5. 4, 2010
87 2010 High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions JZ Sun, MC Gaidis, G Hu, EJ O’Sullivan, SL Brown, JJ Nowak, ...
Journal of Applied Physics 105 (7), 2009
87 2009 Demonstration of nanosecond operation in stochastic magnetic tunnel junctions C Safranski, J Kaiser, P Trouilloud, P Hashemi, G Hu, JZ Sun
Nano letters 21 (5), 2040-2045, 2021
80 2021 Patterned multilevel perpendicular magnetic recording media M Albrecht, O Hellwig, G Hu, BD Terris
US Patent 6,947,235, 2005
70 2005 Magnetization reversal in Co∕ Pd nanostructures and films G Hu, T Thomson, CT Rettner, S Raoux, BD Terris
Journal of applied physics 97 (10), 2005
68 2005 