| A graphene field-effect device MC Lemme, TJ Echtermeyer, M Baus, H Kurz IEEE Electron Device Letters 28 (4), 282-284, 2007 | 1402 | 2007 |
| Strong plasmonic enhancement of photovoltage in graphene TJ Echtermeyer, L Britnell, PK Jasnos, A Lombardo, RV Gorbachev, ... Nature communications 2 (1), 458, 2011 | 1056 | 2011 |
| Intrinsic and extrinsic corrugation of monolayer graphene deposited on V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ... Physical review letters 102 (7), 076102, 2009 | 452 | 2009 |
| Non-volatile switching in graphene field effect devices TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz IEEE Electron Device Letters 29 (8), 952-954, 2008 | 221 | 2008 |
| Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors TJ Echtermeyer, P Nene, M Trushin, RV Gorbachev, A Eiden, S Milana, ... Nano Letters 14 (7), 3733–3742, 2014 | 210 | 2014 |
| Synthesis of graphene on silicon dioxide by a solid carbon source J Hofrichter, BN Szafranek, M Otto, TJ Echtermeyer, M Baus, A Majerus, ... Nano letters 10 (1), 36-42, 2010 | 205 | 2010 |
| Surface plasmon polariton graphene photodetectors TJ Echtermeyer, S Milana, U Sassi, A Eiden, M Wu, E Lidorikis, AC Ferrari Nano Letters 16 (1), 8-20, 2016 | 201 | 2016 |
| Mobility in graphene double gate field effect transistors MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ... Solid-State Electronics 52 (4), 514-518, 2008 | 144 | 2008 |
| Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ... Nano letters 10 (2), 461-465, 2010 | 137 | 2010 |
| Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light M Taucer, TJ Hammond, PB Corkum, G Vampa, C Couture, N Thire, ... Physical Review B 96 (19), 195420, 2017 | 70 | 2017 |
| Graphene field-effect devices TJ Echtermeyer, MC Lemme, J Bolten, M Baus, M Ramsteiner, H Kurz The European Physical Journal Special Topics 148, 19-26, 2007 | 70 | 2007 |
| CMOS integration of epitaxial Gd2O3 high-k gate dielectrics HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ... Solid-State Electronics 50 (6), 979-985, 2006 | 64 | 2006 |
| 0.86-nm CET Gate Stacks With EpitaxialHigh-Dielectrics and FUSI NiSi Metal Electrodes HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ... IEEE electron device letters 27 (10), 814-816, 2006 | 56 | 2006 |
| Towards substrate engineering of graphene–silicon Schottky diode photodetectors H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ... Nanoscale 10 (7), 3399-3409, 2018 | 49 | 2018 |
| Electron-beam-induced direct etching of graphene C Thiele, A Felten, TJ Echtermeyer, AC Ferrari, C Casiraghi, H Löhneysen, ... Carbon 64, 84-91, 2013 | 49 | 2013 |
| Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors H Selvi, EW Hill, P Parkinson, TJ Echtermeyer Nanoscale 10 (40), 18926-18935, 2018 | 43 | 2018 |
| Graphene-based MIM diode and associated methods A Colli, SA Awan, A Lombardo, TJ Echtermeyer, TS Kulmala, AC Ferrari US Patent 9,202,945, 2015 | 23 | 2015 |
| Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering N Unsuree, H Selvi, MG Crabb, JA Alanis, P Parkinson, TJ Echtermeyer 2D Materials 6 (4), 041004, 2019 | 22 | 2019 |
| Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes T Echtermeyer, HDB Gottlob, T Wahlbrink, T Mollenhauer, M Schmidt, ... Solid-State Electronics 51 (4), 617-621, 2007 | 22 | 2007 |
| Towards graphene field effect transistors MC Lemme, T Echtermeyer, M Baus, BN Szafranek, M Schmidt, H Kurz ECS Transactions 11 (6), 413, 2007 | 18 | 2007 |
