Sample preparation by focused ion beam micromachining for transmission electron microscopy imaging in front-view M Jublot, M Texier Micron 56, 63-67, 2014 | 50 | 2014 |
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications S Pizzini, M Acciarri, S Binetti, D Cavalcoli, A Cavallini, D Chrastina, ... Materials Science and Engineering: B 134 (2-3), 118-124, 2006 | 44 | 2006 |
Tungsten diffusion in silicon A De Luca, A Portavoce, M Texier, C Grosjean, N Burle, V Oison, ... Journal of Applied Physics 115 (1), 2014 | 43 | 2014 |
Swelling and stacking fault formation in helium implanted SiC JF Barbot, MF Beaufort, M Texier, C Tromas Journal of nuclear materials 413 (3), 162-165, 2011 | 40 | 2011 |
Low-temperature intrinsic plasticity in silicon at small scales A Merabet, M Texier, C Tromas, S Brochard, L Pizzagalli, L Thilly, ... Acta Materialia 161, 54-60, 2018 | 32 | 2018 |
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates A Le Donne, S Binetti, G Isella, B Pichaud, M Texier, M Acciarri, S Pizzini Applied Surface Science 254 (9), 2804-2808, 2008 | 31 | 2008 |
Twin boundary migration in an individual platinum nanocrystal during catalytic CO oxidation J Carnis, AR Kshirsagar, L Wu, M Dupraz, S Labat, M Texier, L Favre, ... Nature communications 12 (1), 5385, 2021 | 27 | 2021 |
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ... Scripta Materialia 78, 9-12, 2014 | 26 | 2014 |
Piezoelectric response and electrical properties of Pb (Zr1-xTix) O3 thin films: The role of imprint and composition TW Cornelius, C Mocuta, S Escoubas, A Merabet, M Texier, EC Lima, ... Journal of Applied Physics 122 (16), 2017 | 21 | 2017 |
Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores M Lancin, M Texier, G Regula, B Pichaud Philosophical Magazine 89 (15), 1251-1266, 2009 | 21 | 2009 |
Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores M Lancin, M Texier, G Regula, B Pichaud Philosophical Magazine 89 (15), 1251-1266, 2009 | 21 | 2009 |
Microstructure of icosahedral Al-Pd-Mn quasicrystals deformed at room temperature in an anisotropic confining medium M Texier, A Proult, J Bonneville, J Rabier, N Baluc, P Cordier Philosophical magazine letters 82 (12), 659-669, 2002 | 19 | 2002 |
Silicide formation during reaction between Ni ultra-thin films and Si (0 0 1) substrates J Fouet, M Texier, MI Richard, A Portavoce, D Mangelinck, C Guichet, ... Materials Letters 116, 139-142, 2014 | 18 | 2014 |
Optimum correction conditions for aberration-corrected HRTEM SiC dumbbells chemical imaging M Texier, J Thibault-Pénisson Micron 43 (4), 516-523, 2012 | 18 | 2012 |
On the yield point of icosahedral AlCuFe quasicrystals M Texier, J Bonneville, A Proult, J Rabier, N Baluc, P Guyot Scripta materialia 49 (1), 41-46, 2003 | 16 | 2003 |
Microstructural analysis of i-AlPdMn quasi-crystals deformed between room temperature and 300° C under confining pressure M Texier, A Proult, J Bonneville, J Rabier, N Baluc, P Cordier Scripta materialia 49 (1), 47-52, 2003 | 16 | 2003 |
Al–Pd–Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain M Texier, A Joulain, J Bonneville, L Thilly, J Rabier Philosophical Magazine 87 (10), 1497-1511, 2007 | 15 | 2007 |
LACBED study of extended defects in 4H-SiC M Texier, G Regula, M Lancin, B Pichaud Philosophical magazine letters 86 (9), 529-537, 2006 | 12 | 2006 |
TEM characterization of dislocations and slip systems in stishovite deformed at 14 GPa, 1,300 C in the multianvil apparatus M Texier, P Cordier Physics and chemistry of minerals 33 (6), 394-402, 2006 | 12 | 2006 |
Shear experiments under confining pressure conditions of Al–Pd–Mn single quasicrystals M Texier, L Thilly, J Bonneville, A Proult, J Rabier Materials Science and Engineering: A 400, 311-314, 2005 | 12 | 2005 |