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Co-authors
Robert BuhrmanCornell UniversityVerified email at cornell.edu- Jack C. SankeyAssistant Professor of Physics, McGill UniversityVerified email at mcgill.ca
- Marko RadosavljevicIntel CorporationVerified email at intel.com
- Marcus FreitagIBM T. J. Watson Research CenterVerified email at us.ibm.com
- a.t. charlie Johnsonrebecca w bushnell professor of physics and astronomy, university of pennsylvaniaVerified email at physics.upenn.edu
- Patrick BragancaWestern DigitalVerified email at hgst.com
- Ilya KrivorotovProfessor, University of California at IrvineVerified email at uci.edu
- Yong-Tao CuiAssociate Professor, University of California, RiversideVerified email at ucr.edu
- Giovanni FinocchioUniversity of MessinaVerified email at unime.it
- Chen WangAssociate Professor of Physics, University of Massachusetts, AmherstVerified email at umass.edu
- Gregory D. FuchsProfessor of Applied Physics, Cornell UniversityVerified email at cornell.edu
- Praveen GowthamPostdoctoral Researcher, UC BerkeleyVerified email at cornell.edu
- K. Andre MkhoyanProfessor, Chemical Engineering and Materials Science, University of MinnesotaVerified email at umn.edu
- John C. ReadNonvolatile Memory Materials, Western DigitalVerified email at wdc.com
- Abhishek DubeApplied MaterialsVerified email at cornell.edu
- Udayan GangulyProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
- Meng ZhuApplied MaterialsVerified email at sunypoly.edu
- Lin XueSenior Process Engineer, Applied MaterialsVerified email at cornell.edu
- Nitin SamarthVerne M. Willaman Professor of Physics, Professor of Materials Science/Engineering, Penn StateVerified email at psu.edu
- Liesl FolksProf. Electrical and Computer Engineering, VP Semiconductor Strategy, University of ArizonaVerified email at arizona.edu
