Anthony O'Neill
Anthony O'Neill
Verified email at ncl.ac.uk
Title
Cited by
Cited by
Year
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to -type silicon carbide
IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ...
Journal of Applied Physics 97 (8), 083709, 2005
1752005
Experimental observation of negative capacitance in ferroelectrics at room temperature
DJR Appleby, NK Ponon, KSK Kwa, B Zou, PK Petrov, T Wang, NM Alford, ...
Nano letters 14 (7), 3864-3868, 2014
1592014
Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
C Fiegna, Y Yang, E Sangiorgi, AG O'Neill
IEEE Transactions on Electron Devices 55 (1), 233-244, 2007
1282007
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
NK Ponon, DJR Appleby, E Arac, PJ King, S Ganti, KSK Kwa, A O'Neill
Thin Solid Films 578, 31-37, 2015
1192015
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics
KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
1152002
Deep submicron CMOS based on silicon germanium technology
AG O'Neill, DA Antoniadis
IEEE Transactions on Electron Devices 43 (6), 911-918, 1996
991996
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
972003
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE transactions on electron devices 53 (5), 1142-1152, 2006
842006
The sinusoidal probe: a new approach to improve electrode longevity
HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ...
Frontiers in neuroengineering 7, 10, 2014
782014
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ...
Semiconductor Science and Technology 20 (3), 271, 2005
762005
Device and circuit performance of SiGe/Si MOSFETs
SG Badcock, AG O’Neill, EG Chester
Solid-State Electronics 46 (11), 1925-1932, 2002
552002
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
532004
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
512007
Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance
SH Olsen, AG O'Neill, DJ Norris, AG Cullis, NJ Woods, J Zhang, ...
Semiconductor science and technology 17 (7), 655, 2002
482002
A new version of crystal field theory and its application to ZnSe: Co
AG O'neill, JW Allen
Solid state communications 46 (11), 833-836, 1983
481983
High speed deep sub-micron MOSFET using high mobility strained silicon channel
AG O'Neill, DA Antoniadis
ESSDERC'95: Proceedings of the 25th European Solid State Device Research …, 1995
461995
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors
M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
452007
A process for strained silicon n-channel HMOSFETs
PA Clifton, PR Routley, PK Gurry, AG O'Neill, JA Carter, HA Kemhadjian
ESSDERC'96: Proceedings of the 26th European Solid State Device Research …, 1996
441996
A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor
SA Mojarad, KSK Kwa, JP Goss, Z Zhou, NK Ponon, DJR Appleby, ...
Journal of Applied Physics 111 (1), 014503, 2012
402012
Recent progress and current issues in SiC semiconductor devices for power applications
CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ...
IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001
402001
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