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Dinusha Herath Mudiyanselage
Dinusha Herath Mudiyanselage
Verified email at asu.edu
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Cited by
Year
Light-driven Raman coherence as a nonthermal route to ultrafast topology switching in a Dirac semimetal
C Vaswani, LL Wang, DH Mudiyanselage, Q Li, PM Lozano, GD Gu, ...
Physical Review X 10 (2), 021013, 2020
1002020
Terahertz second-harmonic generation from lightwave acceleration of symmetry-breaking nonlinear supercurrents
C Vaswani, M Mootz, C Sundahl, DH Mudiyanselage, JH Kang, X Yang, ...
Physical Review Letters 124 (20), 207003, 2020
782020
Ultrafast Control of Excitonic Rashba Fine Structure by Phonon Coherence in the Metal Halide Perovskite
Z Liu, C Vaswani, X Yang, X Zhao, Y Yao, Z Song, D Cheng, Y Shi, L Luo, ...
Physical Review Letters 124 (15), 157401, 2020
432020
High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD
Y Ma, T Chen, X Zhang, W Tang, B Feng, Y Hu, L Zhang, X Zhou, X Wei, ...
ACS Applied Materials & Interfaces 14 (30), 35194-35204, 2022
302022
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ...
Materials Today 49, 296-323, 2021
252021
Helicity-dependent terahertz photocurrent and phonon dynamics in hybrid metal halide perovskites
D Cheng, Z Liu, L Luo, C Vaswani, JM Park, Y Yao, Z Song, C Huang, ...
The Journal of Chemical Physics 151 (24), 2019
182019
A review of ultrawide bandgap materials: properties, synthesis and devices
M Xu, D Wang, K Fu, DH Mudiyanselage, H Fu, Y Zhao
Oxford Open Materials Science 2 (1), itac004, 2022
162022
High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant
W Tang, Y Ma, X Zhang, X Zhou, L Zhang, X Zhang, T Chen, X Wei, W Lin, ...
Applied Physics Letters 120 (21), 2022
122022
Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors
D Wang, DH Mudiyanselage, H Fu
IEEE Transactions on Electron Devices 69 (1), 69-74, 2021
112021
Ultrawide bandgap vertical β-(AlxGa1− x) 2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates
DH Mudiyanselage, D Wang, H Fu
Journal of Vacuum Science & Technology A 41 (2), 2023
102023
Low-frequency noise in β-(AlxGa1− x) 2O3 Schottky barrier diodes
S Ghosh, DH Mudiyanselage, S Rumyantsev, Y Zhao, H Fu, S Goodnick, ...
Applied Physics Letters 122 (21), 2023
82023
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination
DH Mudiyanselage, D Wang, H Fu
IEEE Journal of the Electron Devices Society 10, 89-97, 2021
72021
Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes
S Ghosh, DH Mudiyanselage, F Kargar, Y Zhao, H Fu, AA Balandin
Advanced Electronic Materials, 2300501, 2023
62023
The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory
X Zhang, X Duan, W Niu, X Liu, X Zou, H Huang, DH Mudiyanselage, ...
IEEE Transactions on Electron Devices 69 (10), 5644-5648, 2022
62022
High-performance ε-Ga2O3 solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer
Y Hu, L Zhang, T Chen, Y Ma, W Tang, Z Huang, BT Li, K Xu, ...
Vacuum 213, 112130, 2023
52023
Anisotropic electrical properties of NiO x/β-Ga2O3 pn heterojunctions on (2̅01),(001), and (010) crystal orientations
DH Mudiyanselage, R Mandia, D Wang, J Adivarahan, Z He, K Fu, Y Zhao, ...
Applied Physics Express 16 (9), 094002, 2023
42023
Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3
C Leblanc, DH Mudiyanselage, S Song, H Zhang, AV Davydov, H Fu, ...
Nanoscale 15 (23), 9964-9972, 2023
32023
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
DH Mudiyanselage, D Wang, Y Zhao, H Fu
Journal of Applied Physics 131 (21), 2022
32022
Single-Cycle Terahertz Driven Quantum Beats Reveal Symmetry-selective Control of Excitonic Fine Structure in Perovskite
L Liu, C Vaswani, X Yang, X Zhao, Y Yao, Z Song, D Cheng, Y Shi, L Luo, ...
Preprint at https://arxiv. org/abs/1905.12373, 2019
22019
Design of kV-Class and Low E-Mode -GaO Current Aperture Vertical Transistors With Delta-Doped -(AlGaO/GaO Heterostructure
D Wang, DH Mudiyanselage, H Fu
IEEE Transactions on Electron Devices, 2023
1*2023
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