| Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes RA Arif, YK Ee, N Tansu Applied Physics Letters 91 (9), 2007 | 331 | 2007 |
| Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes H Zhao, RA Arif, YK Ee, N Tansu IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008 | 255 | 2008 |
| Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010 | 232 | 2010 |
| Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013 | 205 | 2013 |
| Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays YK Ee, RA Arif, N Tansu, P Kumnorkaew, JF Gilchrist Applied Physics Letters 91 (22), 2007 | 172 | 2007 |
| Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes RA Arif, H Zhao, YK Ee, N Tansu IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008 | 163 | 2008 |
| Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures YK Ee, P Kumnorkaew, RA Arif, H Tong, JF Gilchrist, N Tansu Optics Express 17 (16), 13747-13757, 2009 | 155 | 2009 |
| Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm H Zhao, RA Arif, N Tansu IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009 | 154 | 2009 |
| Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009 | 151 | 2009 |
| Type-II InGaN-GaNAs quantum wells for lasers applications RA Arif, H Zhao, N Tansu Applied Physics Letters 92 (1), 2008 | 138 | 2008 |
| Self-consistent gain analysis of type-II ‘W’InGaN–GaNAs quantum well lasers H Zhao, RA Arif, N Tansu Journal of Applied physics 104 (4), 2008 | 122 | 2008 |
| Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime HP Zhao, GY Liu, XH Li, RA Arif, GS Huang, JD Poplawsky, ST Penn, ... IET optoelectronics 3 (6), 283-295, 2009 | 95 | 2009 |
| Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm H Zhao, RA Arif, YK Ee, N Tansu Optical and quantum electronics 40, 301-306, 2008 | 67 | 2008 |
| Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy YK Ee, H Zhao, RA Arif, M Jamil, N Tansu Journal of Crystal Growth 310 (7-9), 2320-2325, 2008 | 53 | 2008 |
| MOVPE of InN films on GaN templates grown on sapphire and silicon (111) substrates M Jamil, RA Arif, YK Ee, H Tong, JB Higgins, N Tansu physica status solidi (a) 205 (7), 1619-1624, 2008 | 39 | 2008 |
| Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ... Applied Physics Letters 104 (2), 2014 | 37 | 2014 |
| Gallium nitride-based device and method N Tansu, RA Arif, YK Ee US Patent 7,842,531, 2010 | 30 | 2010 |
| IEEE J. Quantum Electron. H Zhao, RA Arif, YK Ee, N Tansu IEEE J. Quantum Electron 45 (66), 2009 | 30 | 2009 |
| Efficient light extraction method and device N Tansu, YK Ee, JF Gilchrist, P Kumnorkaew, RA Arif US Patent 8,076,667, 2011 | 20 | 2011 |
| Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs–GaAs quantum-well lasers G Tsvid, J Kirch, LJ Mawst, M Kanskar, J Cai, RA Arif, N Tansu, ... IEEE Journal of Quantum Electronics 44 (8), 732-739, 2008 | 19 | 2008 |
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα adelaide.edu.au
