Panagiotis Dimitrakis
Panagiotis Dimitrakis
Institute of Nanoscience & Nanotechnology, NCSR "Demokritos"
Verified email at - Homepage
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Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures
S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ...
Nano Letters 3 (4), 533-536, 2003
Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
Hybrid silicon–organic nanoparticle memory device
S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ...
Journal of Applied Physics 94 (8), 5234-5239, 2003
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
Recent advances in nanoparticle memories
D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand
Materials Science and Engineering: B 124, 93-101, 2005
Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications
AV Emelyanov, KE Nikiruy, VA Demin, VV Rylkov, AI Belov, DS Korolev, ...
Microelectronic Engineering 215, 110988, 2019
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
Si and Ge nanocrystals for future memory devices
C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
MOS memory structures by very-low-energy-implanted Si in thin SiO2
P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
SV Tikhov, AN Mikhaylov, AI Belov, DS Korolev, IN Antonov, VV Karzanov, ...
Microelectronic Engineering 187, 134-138, 2018
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
Electronic memory device based on a single-layer fluorene-containing organic thin film
C Pearson, JH Ahn, MF Mabrook, DA Zeze, MC Petty, KT Kamtekar, ...
Applied Physics Letters 91 (12), 2007
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
JE Kruse, L Lymperakis, S Eftychis, A Adikimenakis, G Doundoulakis, ...
Journal of Applied Physics 119 (22), 2016
Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping
N Vasileiadis, P Karakolis, P Mandylas, V Ioannou-Sougleridis, ...
IEEE Transactions on Nanotechnology, 2021
Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ...
Microelectronic engineering 73, 730-735, 2004
Metal nano-floating gate memory devices fabricated at low temperature
S Koliopoulou, P Dimitrakis, D Goustouridis, P Normand, C Pearson, ...
Microelectronic Engineering 83 (4-9), 1563-1566, 2006
Electrical behavior of memory devices based on fluorene-containing organic thin films
P Dimitrakis, P Normand, D Tsoukalas, C Pearson, JH Ahn, MF Mabrook, ...
Journal of Applied Physics 104 (4), 2008
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