Sarah M. Eichfeld
Sarah M. Eichfeld
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα psu.edu
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Παρατίθεται από
Παρατίθεται από
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Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
4292016
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...
Nature communications 6 (1), 1-6, 2015
3282015
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
3152015
Silicon nanowire array photoelectrochemical cells
AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
2652007
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
1552016
Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides
A Azizi, S Eichfeld, G Geschwind, K Zhang, B Jiang, D Mukherjee, ...
ACS nano 9 (5), 4882-4890, 2015
1472015
Realizing large-scale, electronic-grade two-dimensional semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
1292018
Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers
JH Park, S Vishwanath, X Liu, H Zhou, SM Eichfeld, SK Fullerton-Shirey, ...
ACS nano 10 (4), 4258-4267, 2016
732016
First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer
Y Nie, C Liang, K Zhang, R Zhao, SM Eichfeld, PR Cha, L Colombo, ...
2D Materials 3 (2), 025029, 2016
582016
Orientation dependence of nickel silicide formation in contacts to silicon nanowires
NS Dellas, BZ Liu, SM Eichfeld, CM Eichfeld, TS Mayer, SE Mohney
Journal of applied physics 105 (9), 094309, 2009
582009
Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry
SM Eichfeld, CM Eichfeld, YC Lin, L Hossain, JA Robinson
APL Materials 2 (9), 092508, 2014
562014
Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays
SM Eichfeld, TT Ho, CM Eichfeld, A Cranmer, SE Mohney, TS Mayer, ...
Nanotechnology 18 (31), 315201, 2007
492007
Nickel and nickel silicide Schottky barrier contacts to -type silicon nanowires
SM Woodruff, NS Dellas, BZ Liu, SM Eichfeld, TS Mayer, JM Redwing, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
452008
Oxidation of silicon nanowires for top-gated field effect transistors
B Liu, Y Wang, T Ho, KK Lew, SM Eichfeld, JM Redwing, TS Mayer, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (3 …, 2008
432008
Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth
SM Eichfeld, VO Colon, Y Nie, K Cho, JA Robinson
2D Materials 3 (2), 025015, 2016
382016
In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors
T Ho, Y Wang, S Eichfeld, KK Lew, B Liu, SE Mohney, JM Redwing, ...
Nano letters 8 (12), 4359-4364, 2008
382008
One dimensional metallic edges in atomically thin WSe2 induced by air exposure
R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, SM Eichfeld, S Fölsch, ...
2D Materials 5 (2), 025017, 2018
362018
Large-area synthesis of WSe2 from WO3 by selenium–oxygen ion exchange
P Browning, S Eichfeld, K Zhang, L Hossain, YC Lin, K Wang, N Lu, ...
2D Materials 2 (1), 014003, 2015
342015
Influence of carbon in metalorganic chemical vapor deposition of few-layer WSe 2 thin films
X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ...
Journal of Electronic Materials 45 (12), 6273-6279, 2016
332016
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides
BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ...
2D Materials 4 (2), 025083, 2017
302017
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