| Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition C Zacharaki, P Tsipas, S Chaitoglou, S Fragkos, M Axiotis, A Lagoyiannis, ... Applied Physics Letters 114 (11), 2019 | 47 | 2019 |
| Reliability aspects of ferroelectric TiN/Hf0. 5Zr0. 5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ... Applied Physics Letters 117 (21), 2020 | 26 | 2020 |
| Depletion induced depolarization field in Hf1− xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium C Zacharaki, P Tsipas, S Chaitoglou, EK Evangelou, CM Istrate, L Pintilie, ... Applied Physics Letters 116 (18), 2020 | 21 | 2020 |
| Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2 N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, C Istrate, ... Communications Physics 5 (1), 178, 2022 | 15 | 2022 |
| Hf0.5Zr0.5O2-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications C Zacharaki, S Chaitoglou, N Siannas, P Tsipas, A Dimoulas ACS Applied Electronic Materials 4 (6), 2815-2821, 2022 | 11 | 2022 |
| The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric GA Boni, CM Istrate, C Zacharaki, P Tsipas, S Chaitoglou, EK Evangelou, ... physica status solidi (a) 218 (4), 2000500, 2021 | 7 | 2021 |
| Epitaxial HfTe2 Dirac semimetal in the 2D limit P Tsipas, P Pappas, E Symeonidou, S Fragkos, C Zacharaki, ... APL Materials 9 (10), 2021 | 6 | 2021 |
| Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Begon-Lours, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 5 | 2021 |
| Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon N Siannas, C Zacharaki, P Tsipas, DJ Kim, W Hamouda, C Istrate, ... Advanced Functional Materials 34 (8), 2311767, 2024 | 3 | 2024 |
| Hf0. 5Zr0. 5O2-based ferroelectric devices for digital and analog non-volatile memories C Zacharaki Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ). Σχολή Θετικών Επιστημών …, 2022 | | 2022 |
| Hafnium-Based Ferroelectric Artificial Synapses on Silicon for Low Power In-Memory Computing A Dimoulas, N Siannas, C Zacharaki, P Tsipas | | |
