| Overview of high voltage SiC power semiconductor devices: Development and application S Ji, Z Zhang, F Wang CES Transactions on Electrical Machines and Systems 1 (3), 254-264, 2017 | 190 | 2017 |
| Temperature-dependent characterization, modeling, and switching speed-limitation analysis of third-generation 10-kV SiC MOSFET S Ji, S Zheng, F Wang, LM Tolbert IEEE Transactions on Power Electronics 33 (5), 4317-4327, 2017 | 145 | 2017 |
| Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit S Ji, T Lu, Z Zhao, H Yu, L Yuan IEEE Transactions on Power Electronics 30 (8), 4165-4174, 2014 | 118 | 2014 |
| Short-Circuit Characterization and Protection of 10-kV SiC mosfet S Ji, M Laitinen, X Huang, J Sun, W Giewont, F Wang, LM Tolbert IEEE Transactions on Power Electronics 34 (2), 1755-1764, 2018 | 91 | 2018 |
| Active clamping circuit with status feedback for series-connected HV-IGBTs T Lu, Z Zhao, S Ji, H Yu, L Yuan IEEE Transactions on Industry Applications 50 (5), 3579-3590, 2014 | 78 | 2014 |
| Design considerations for high-voltage insulated gate drive power supply for 10-kV SiC MOSFET applied in medium-voltage converter L Zhang, S Ji, S Gu, X Huang, JE Palmer, W Giewont, FF Wang, ... IEEE Transactions on Industrial Electronics 68 (7), 5712-5724, 2020 | 69 | 2020 |
| Parameter design of voltage balancing circuit for series connected HV-IGBTs T Lu, Z Zhao, S Ji, H Yu, L Yuan Proceedings of The 7th International Power Electronics and Motion Control …, 2012 | 50 | 2012 |
| HVIGBT physical model analysis during transient S Ji, Z Zhao, T Lu, L Yuan, H Yu IEEE transactions on power electronics 28 (5), 2616-2624, 2012 | 41 | 2012 |
| Medium voltage (13.8 kV) transformer-less grid-connected DC/AC converter design and demonstration using 10 kV SiC MOSFETs S Ji, X Huang, L Zhang, J Palmer, W Giewont, F Wang, LM Tolbert 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 1953-1959, 2019 | 33 | 2019 |
| Design considerations of high-voltage-insulated gate drive power supply for 10 kV SiC MOSFET in medium-voltage application L Zhang, S Ji, S Gu, X Huang, J Palmer, W Giewont, F Wang, LM Tolbert 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 425-430, 2019 | 31 | 2019 |
| Parasitic capacitors' impact on switching performance in a 10 kV SiC MOSFET based converter X Huang, S Ji, J Palmer, L Zhang, LM Tolbert, F Wang 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 30 | 2018 |
| An FPGA-based voltage balancing control for multi-HV-IGBTs in series connection S Ji, F Wang, LM Tolbert, T Lu, Z Zhao, H Yu IEEE Transactions on Industry Applications 54 (5), 4640-4649, 2018 | 30 | 2018 |
| Physical model analysis during transient for series-connected HVIGBTs S Ji, T Lu, Z Zhao, H Yu, L Yuan, S Yang, C Secrest IEEE Transactions on Power Electronics 29 (11), 5727-5737, 2014 | 30 | 2014 |
| A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter S Ji, L Zhang, X Huang, J Palmer, F Wang, LM Tolbert IEEE Transactions on Power Electronics 35 (11), 12533-12543, 2020 | 29 | 2020 |
| Flux balancing control of ungapped nanocrystalline core-based transformer in dual active bridge converters P Yao, X Jiang, P Xue, S Ji, F Wang IEEE Transactions on Power Electronics 35 (11), 11463-11474, 2020 | 28 | 2020 |
| Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET S Ji, M Laitinen, X Huang, J Sun, B Giewont, LM Tolbert, F Wang 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2775-2779, 2018 | 23 | 2018 |
| Parameter design of a three-level converter based on series-connected HV-IGBTs T Lu, Z Zhao, H Yu, S Ji, L Yuan, F He IEEE Transactions on Industry Applications 50 (6), 3943-3954, 2014 | 20 | 2014 |
| Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs X Huang, J Palmer, S Ji, L Zhang, F Wang, LM Tolbert, W Giewont 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 1926-1933, 2019 | 19 | 2019 |
| Protection and temperature-dependent switching characterization of latest generation 10 kV SiC MOSFETs S Ji, S Zheng, Z Zhang, F Wang, LM Tolbert 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 783-788, 2017 | 18 | 2017 |
| Comprehensive analysis and improvement methods of noise immunity of desat protection for high voltage SiC MOSFETs with high dv/dt X Huang, S Ji, C Nie, D Li, M Lin, LM Tolbert, F Wang, W Giewont IEEE Open Journal of Power Electronics 3, 36-50, 2021 | 16 | 2021 |
Fred WangUniversity of Tennessee, KnoxvilleVerified email at utk.edu
