Alain Claverie
Alain Claverie
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Cited by
Energetics of self-interstitial clusters in Si
NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in
B Garrido Fernández, M Lopez, C Garcıa, A Pérez-Rodrıguez, JR Morante, ...
Journal of Applied Physics 91 (2), 798-807, 2002
Ostwald ripening of end-of-range defects in silicon
C Bonafos, D Mathiot, A Claverie
Journal of Applied Physics 83 (6), 3008-3017, 1998
Basic mechanisms involved in the Smart-Cut® process
B Aspar, M Bruel, H Moriceau, C Maleville, T Poumeyrol, AM Papon, ...
Microelectronic Engineering 36 (1-4), 233-240, 1997
Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy
F Hüe, M Hÿtch, H Bender, F Houdellier, A Claverie
Physical review letters 100 (15), 2008
Extended defects in shallow implants
A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ...
Applied Physics A 76, 1025-1033, 2003
Optical visualization and electrical characterization of fast-rising pulsed dielectric barrier discharge for airflow control applications
N Benard, N Zouzou, A Claverie, J Sotton, E Moreau
Journal of Applied Physics 111 (3), 2012
Tulip flame-the mechanism of flame front inversion
B Ponizy, A Claverie, B Veyssière
Combustion and flame 161 (12), 3051-3062, 2014
Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in
M López, B Garrido, C Garcıa, P Pellegrino, A Pérez-Rodrıguez, ...
Applied Physics Letters 80 (9), 1637-1639, 2002
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
Engineering strained silicon on insulator wafers with the Smart CutTM technology
B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ...
Solid-state electronics 48 (8), 1285-1296, 2004
The generic nature of the Smart-Cut® process for thin film transfer
B Aspar, H Moriceau, E Jalaguier, C Lagahe, A Soubie, B Biasse, ...
Journal of Electronic Materials 30, 834-840, 2001
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
J Grisolia, G Ben Assayag, A Claverie, B Aspar, C Lagahe, L Laanab
Applied Physics Letters 76 (7), 852-854, 2000
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
Stress measurements of germanium nanocrystals embedded in silicon oxide
A Wellner, V Paillard, C Bonafos, H Coffin, A Claverie, B Schmidt, ...
Journal of Applied Physics 94 (9), 5639-5642, 2003
Formation energies and relative stability of perfect and faulted dislocation loops in silicon
F Cristiano, J Grisolia, B Colombeau, M Omri, B De Mauduit, A Claverie, ...
Journal of Applied Physics 87 (12), 8420-8428, 2000
Towards disruptions in Earth observation? New Earth Observation systems and markets evolution: Possible scenarios and impacts
G Denis, A Claverie, X Pasco, JP Darnis, B de Maupeou, M Lafaye, ...
Acta Astronautica 137, 415-433, 2017
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
Kinetic study of group IV nanoparticles ion beam synthesized in SiO2
C Bonafos, B Colombeau, A Altibelli, M Carrada, GB Assayag, B Garrido, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001
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