| Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of applied physics 83, 3656, 1998 | 806 | 1998 |
| The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998 | 558 | 1998 |
| Intersubband absorption at λ∼ 1.55 μm in well-and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers C Gmachl, HM Ng, SNG Chu, AY Cho Applied Physics Letters 77, 3722, 2000 | 387 | 2000 |
| Molecular-beam epitaxy of GaN/AlGaN multiple quantum wells on R-plane (1012) sapphire substrates HM Ng Applied physics letters 80, 4369, 2002 | 365 | 2002 |
| GaN nanotip pyramids formed by anisotropic etching HM Ng, NG Weimann, A Chowdhury Journal of applied physics 94 (1), 650-653, 2003 | 221 | 2003 |
| High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy HM Ng, TD Moustakas, SNG Chu Applied Physics Letters 76, 2818, 2000 | 209 | 2000 |
| Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition J Zhong, S Muthukumar, Y Chen, Y Lu, HM Ng, W Jiang, EL Garfunkel Applied physics letters 83, 3401, 2003 | 208 | 2003 |
| Second-harmonic generation in periodically poled GaN A Chowdhury, HM Ng, M Bhardwaj, NG Weimann Applied physics letters 83, 1077, 2003 | 203 | 2003 |
| Comparative study of ultrafast intersubband electron scattering times at∼ 1.55 μm wavelength in GaN/AlGaN heterostructures JD Heber, C Gmachl, HM Ng, AY Cho Applied physics letters 81, 1237, 2002 | 179 | 2002 |
| Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼ 1.75–4.2 μm C Gmachl, HM Ng, AY Cho Applied Physics Letters 77, 334, 2000 | 166 | 2000 |
| Intersubband absorption in degenerately doped GaN/AlGaN coupled double quantum wells C Gmachl, HM Ng, AY Cho Applied Physics Letters 79, 1590, 2001 | 161 | 2001 |
| Light-emitting crystal structures HM Ng US Patent 7,952,109, 2011 | 126 | 2011 |
| Light-emitting crystal structures HM Ng US Patent 7,952,109, 2011 | 126 | 2011 |
| Light-emitting crystal structures HM Ng US Patent 7,952,109, 2011 | 126 | 2011 |
| Broadening of near-band-gap photoluminescence in n-GaN films E Iliopoulos, D Doppalapudi, HM Ng, TD Moustakas Applied physics letters 73, 375, 1998 | 121 | 1998 |
| Distributed Bragg reflectors based on AlN/GaN multilayers HM Ng, D Doppalapudi, E Iliopoulos, TD Moustakas Applied physics letters 74, 1036, 1999 | 115 | 1999 |
| Multimedia Telecommunication Apparatus With Motion Tracking HM Ng, EL Sutter US Patent App. 13/029,326, 2012 | 100 | 2012 |
| Sub-picosecond electron scattering time for λ= 1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells C Gmachl, SV Frolov, HM Ng, SNG Chu, AY Cho Electronics Letters 37 (6), 378-380, 2001 | 95 | 2001 |
| Electrical characterization of GaN/SiC np heterojunction diodes JT Torvik, M Leksono, JI Pankove, B Van Zeghbroeck, HM Ng, ... Applied physics letters 72, 1371, 1998 | 80 | 1998 |
| Method and apparatus for providing an immersive meeting experience for remote meeting participants HM Ng, EL Sutter, RM Abbot US Patent App. 13/029,168, 2012 | 78 | 2012 |
Theodore D MoustakasBoston University, Electrical and Computer Engineering DepartmentΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα bu.edu
