T.M. Smeeton
T.M. Smeeton
Platform Director, Envisics
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα envisics.com - Αρχική σελίδα
Παρατίθεται από
Παρατίθεται από
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied physics letters 83 (26), 5419-5421, 2003
Optical and microstructural studies of single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 103508, 2005
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
In-plane imperfections in GaN studied by x-ray diffraction
ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ...
Journal of Physics D: Applied Physics 38 (10A), A99, 2005
Design of a creep resistant nickel base superalloy for power plant applications: Part 1-Mechanical properties modelling
F Tancret, H Bhadeshia, DJC MacKay
Materials Science and Technology 19 (3), 283-290, 2003
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
Strong carrier confinement in In x Ga 1− x N∕ Ga N quantum dots grown by molecular beam epitaxy
M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan
Physical Review B 75 (4), 045314, 2007
Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results
F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ...
Materials science and technology 19 (3), 296-302, 2003
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
physica status solidi (b) 240 (2), 297-300, 2003
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ...
Electronics Letters 41 (13), 739-741, 2005
Degradation of laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ...
Applied Physics Letters 92 (15), 151110, 2008
Semiconductor device and a method of manufacture thereof
TM Smeeton, KL Smith, MX Sénès, SE Hooper
US Patent 8,334,157, 2012
Exciton localization in InGaN/GaN single quantum well structures
DM Graham, AS Vala, P Dawson, MJ Godfrey, MJ Kappers, TM Smeeton, ...
physica status solidi (b) 240 (2), 344-347, 2003
AlInGaN light-emitting device
KL Smith, MX Sénès, TM Smeeton, SE Hooper
US Patent 7,858,962, 2010
Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals
PN Taylor, MA Schreuder, TM Smeeton, AJD Grundy, JAR Dimmock, ...
Journal of Materials Chemistry C 2 (22), 4379-4382, 2014
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
SE Bennett, TM Smeeton, DW Saxey, GDW Smith, SE Hooper, ...
Journal of Applied Physics 111 (5), 053508, 2012
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy
WS Tan, M Kauer, SE Hooper, JM Barnes, M Rossetti, TM Smeeton, ...
Electronics Letters 44 (5), 351-353, 2008
Fuel injection control system and method
DR Puckett
US Patent 6,705,290, 2004
Continuous-wave operation of monolithic two-mode optical flip-flop with etched laser mirrors
BB Jian
Electronics Letters 32 (20), 1923-1925, 1996
Ultraviolet treatment device
TM Smeeton, EA Boardman, SE Hooper
US Patent App. 13/651,803, 2014
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