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Sayeed Ahmad
Sayeed Ahmad
Assistant Professor, National Institute of Technology, Srinagar
Verified email at zhcet.ac.in - Homepage
Title
Cited by
Cited by
Year
Single-ended Schmitt-trigger-based robust low-power SRAM cell
S Ahmad, MK Gupta, N Alam, M Hasan
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016
1642016
Robust TFET SRAM cell for ultra-low power IoT applications
S Ahmad, N Alam, M Hasan
AEU-International Journal of Electronics and Communications 89, 70-76, 2018
772018
Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory
S Ahmad, MK Gupta, N Alam, M Hasan
Microelectronics Journal 62, 1-11, 2017
682017
Low leakage fully half-select-free robust SRAM cells with BTI reliability analysis
S Ahmad, B Iqbal, N Alam, M Hasan
IEEE Transactions on Device and Materials Reliability 18 (3), 337-349, 2018
672018
Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications
S Ahmad, N Alam, M Hasan
AEU-International Journal of Electronics and Communications 83, 366-375, 2018
572018
TFET-based robust 7T SRAM cell for low power application
S Ahmad, SA Ahmad, M Muqeem, N Alam, M Hasan
IEEE transactions on electron devices 66 (9), 3834-3840, 2019
402019
A Robust 10T SRAM Cell with Enhanced Read Operation
S Ahmad, N Alam, M Hasan
International Journal of Computer Applications 129 (2), 7-12, 2015
82015
Simulation for performance analysis of grid-connected induction generators with input voltage control
FI Bakhsh, S Islam, S Ahmad
2013 Third International Conference on Advanced Computing and Communication …, 2013
82013
A Comprehensive Review of Design Challenges and Techniques for Nanoscale SRAM: A Cell Perspective
S Ahmad, N Alam, M Hasan, BS Kong
TechRxiv. Preprint. https://doi.org/10.36227/techrxiv.21326055.v1, 2022
32022
A 9 T SRAM cell with data-independent read bitline leakage and improved read sensing margin for low power applications
A Sharif, S Ahmad, N Alam
Semiconductor Science and Technology 37 (5), 055001, 2022
32022
Soft error hardened symmetric SRAM cell with high read stability
S Ahmad, N Alam, M Hasan
2017 International Conference on Multimedia, Signal Processing and …, 2017
32017
Low leakage write-enhanced robust 11T SRAM cell with fully half-select-free operation
S Ahmad, N Alam, M Hasan
2017 International Conference on Trends in Electronics and Informatics (ICEI …, 2017
32017
Comparative Standardization of Roots of Boerhaavia diffusa Linn. From Two Different Geographical Regions
AK Gupta, K Kaur, N Alam, S Ahmad, OP Agarwal, P Alam
Research journal of pharmacy and technology 5 (1), 114-118, 2012
32012
Logic Circuit Implementation for Enabling SRAM Based In Memory Computing
M Izhar, S Ahmad, SA Rahman
2022 5th International Conference on Multimedia, Signal Processing and …, 2022
22022
Radiation Hardened Area-Efficient 10T SRAM Cell for Space Applications
S Ahmad, N Alam, M Hasan
2021 25th International Symposium on VLSI Design and Test (VDAT), 1-6, 2021
22021
Compact and Reliable Low Power Non-Volatile TCAM Cell
A Shaban, S Ahmad, N Alam, M Hasan
2018 8th International Symposium on Embedded Computing and System Design …, 2018
22018
Low-Power Memory Design for IoT-Enabled Systems: Part 1
A Sharif, S Ahmad, N Alam
Electrical and Electronic Devices, Circuits and Materials, 43-62, 2021
12021
Design of Low Leakage Radiation Hardened 13T SRAM Cell
SJ Kidwai, S Ahmad, N Alam
2022 5th International Conference on Multimedia, Signal Processing and …, 2022
2022
Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin
A Shaban, S Ahmad, N Alam, M Hasan
Journal of Low Power Electronics 15 (2), 193-203, 2019
2019
Year of Publication: 2015
S Ahmad, N Alam, M Hasan
2015
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