| Reliability ofStacks for DRAM Applications S Kupke, S Knebel, U Schroeder, S Schmelzer, U Bottger, T Mikolajick IEEE electron device letters 33 (12), 1699-1701, 2012 | 25 | 2012 |
| Defect generation and activation processes in HfO2 thin films: Contributions to stress‐induced leakage currents R Öttking, S Kupke, E Nadimi, R Leitsmann, F Lazarevic, P Plänitz, G Roll, ... physica status solidi (a) 212 (3), 547-553, 2015 | 23 | 2015 |
| Influence of frequency dependent time to breakdown on high-k/metal gate reliability S Knebel, S Kupke, U Schroeder, S Slesazeck, T Mikolajick, R Agaiby, ... IEEE transactions on electron devices 60 (7), 2368-2371, 2013 | 22 | 2013 |
| Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability S Kupke, S Knebel, S Rahman, S Slesazeck, T Mikolajick, R Agaiby, ... 2014 IEEE International Reliability Physics Symposium, 5B. 1.1-5B. 1.6, 2014 | 18 | 2014 |
| The Degradation Process of High- Gate-Stacks: A Combined Experimental and First Principles Investigation E Nadimi, G Roll, S Kupke, R Öttking, P Plänitz, C Radehaus, M Schreiber, ... IEEE Transactions on Electron Devices 61 (5), 1278-1283, 2014 | 17 | 2014 |
| Evolution of the structure and magneto-optical properties of ion beam synthesized iron nanoclusters J Kennedy, J Leveneur, Y Takeda, GVM Williams, S Kupke, DRG Mitchell, ... Journal of Materials Science 47, 1127-1134, 2012 | 17 | 2012 |
| OFF-state induced threshold voltage relaxation after PBTI stress S Kupke, S Knebel, G Roll, S Slesazeck, T Mikolajick, G Krause, G Kurz 2012 IEEE International Integrated Reliability Workshop Final Report, 95-98, 2012 | 15 | 2012 |
| Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors J Ocker, S Kupke, S Slesazeck, T Mikolajick, E Erben, M Drescher, ... 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 4 | 2014 |
| Experimental proof of the drain-side dielectric breakdown of HKMG nMOSFETs under logic circuit operation S Kupke, S Knebel, J Ocker, S Slesazeck, R Agaiby, M Trentzsch, ... IEEE Electron Device Letters 36 (5), 430-432, 2015 | 3 | 2015 |
| Dielectric backside passivation-improvements by dipole optimization S Jakschik, E Erben, F Benner, S Kupke, I Dirnstorfer, M Rose, I Endler, ... Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition …, 2011 | 2 | 2011 |
| Reliability of high-k/metal gate field-effect transistors considering circuit operational constraints S Kupke BoD–Books on Demand, 2016 | | 2016 |
| Reliability of Formula Not Shown Stacks for DRAM Applications S Kupke, S Knebel, U Schroeder, S Schmelzer, U Bottger, T Mikolajick IEEE ELECTRON DEVICE LETTERS 33 (12), 1699-1701, 2012 | | 2012 |
| Comparison of the annealing treatments of PVD and ALD Al {sub 2} O {sub 3} passivated silicon for solar cell applications F Benner, S Kupke, S Jakschik, M Tarasova, T Mikolajick Verhandlungen der Deutschen Physikalischen Gesellschaft, 2011 | | 2011 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenVerified email at namlab.com
