Wai Yuen Fu
Wai Yuen Fu
Research Assistant Professor, Electrical and Electronic Engineering, the University of Hong Kong
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα hku.hk - Αρχική σελίδα
Παρατίθεται από
Παρατίθεται από
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of applied physics 114 (13), 133510, 2013
Elastic constants and critical thicknesses of ScGaN and ScAlN
S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of applied physics 114 (24), 243516, 2013
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
KH Li, WY Fu, YF Cheung, KKY Wong, Y Wang, KM Lau, HW Choi
Optica 5 (5), 564-569, 2018
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 072104, 2015
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
Scientific reports 7 (1), 1-8, 2017
Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography
WY Fu, KKY Wong, HW Choi
Applied Physics Letters 95 (13), 133125, 2009
Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides
KH Li, YF Cheung, WY Fu, KKY Wong, HW Choi
IEEE Journal of Selected Topics In Quantum Electronics 24 (6), 1-6, 2018
Geometrical shaping of InGaN light-emitting diodes by laser micromachining
WY Fu, KN Hui, XH Wang, KKY Wong, PT Lai, HW Choi
IEEE Photonics Technology Letters 21 (15), 1078-1080, 2009
Evaluation of InGaN/GaN light-emitting diodes of circular geometry
XH Wang, WY Fu, PT Lai, HW Choi
Optics express 17 (25), 22311-22319, 2009
Structure and strain relaxation effects of defects in InxGa1−xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 103513, 2014
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ...
Nano letters 15 (11), 7639-7643, 2015
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
The microstructure of non-polar a-plane (110) InGaN quantum wells
JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 175703, 2016
Polychromatic light-emitting diodes with a fluorescent nanosphere opal coating
KN Hui, WY Fu, WN Ng, CH Leung, PT Lai, KKY Wong, HW Choi
Nanotechnology 19 (35), 355203, 2008
Intensity-stabilized LEDs with monolithically integrated photodetectors
KH Li, H Lu, WY Fu, YF Cheung, HW Choi
IEEE Transactions on Industrial Electronics 66 (9), 7426-7432, 2018
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
JT Griffiths, T Zhu, F Oehler, RM Emery, WY Fu, BPL Reid, RA Taylor, ...
APL materials 2 (12), 126101, 2014
Dislocation core structures in Si-doped GaN
SL Rhode, MK Horton, WY Fu, SL Sahonta, MJ Kappers, TJ Pennycook, ...
Applied Physics Letters 107 (24), 243104, 2015
Room temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithography
WY Fu, KKY Wong, HW Choi
Journal of Applied Physics 107 (6), 063104, 2010
Chip-scale GaN integration
KH Li, WY Fu, HW Choi
Progress in quantum electronics 70, 100247, 2020
Metallic nanoparticle array on GaN by microsphere lithography
GY Mak, WY Fu, EY Lam, HW Choi
physica status solidi c 6 (S2 2), S654-S657, 2009
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