| Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ... Advanced Materials, 2201082, 2022 | 38 | 2022 |
| Toward automated defect extraction from bias temperature instability measurements D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ... IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021 | 37 | 2021 |
| Physical modeling of charge trapping in 4H-SiC DMOSFET technologies C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ... IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021 | 36 | 2021 |
| Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ... Microelectronics Reliability 139, 114801, 2022 | 22 | 2022 |
| Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021 | 16 | 2021 |
| Machine learning interatomic potential for silicon-nitride (Si3N4) by active learning D Milardovich, C Wilhelmer, D Waldhoer, L Cvitkovich, G Sivaraman, ... The Journal of Chemical Physics 158 (19), 2023 | 15 | 2023 |
| An ab initio study on resistance switching in hexagonal boron nitride F Ducry, D Waldhoer, T Knobloch, M Csontos, N Jimenez Olalla, ... npj 2D Materials and Applications 6 (1), 58, 2022 | 15 | 2022 |
| Single-versus multi-step trap assisted tunneling currents—Part I: Theory C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ... IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022 | 15 | 2022 |
| Atomistic modeling of oxide defects D Waldhoer, AMB El-Sayed, Y Wimmer, M Waltl, T Grasser Noise in Nanoscale Semiconductor Devices, 609-648, 2020 | 15 | 2020 |
| Comphy v3.0 - A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ... Microelectronics Reliability 146, 115004, 2023 | 14 | 2023 |
| Efficient Modeling of Charge Trapping at Cryogenic Temperatures--Part I: Theory J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ... IEEE Transactions on Electron Devices 68 (12), 6365 - 6371, 2021 | 13 | 2021 |
| Single-versus multi-step trap assisted tunneling currents—Part II: The role of polarons C Schleich, D Waldhör, AM El-Sayed, K Tselios, B Kaczer, T Grasser, ... IEEE Transactions on Electron Devices 69 (8), 4486-4493, 2022 | 12 | 2022 |
| Dynamic modeling of Si (100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation L Cvitkovich, D Waldhör, AM El-Sayed, M Jech, C Wilhelmer, T Grasser Applied Surface Science 610, 155378, 2023 | 10 | 2023 |
| Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors MW Feil, H Reisinger, A Kabakow, T Aichinger, C Schleich, A Vasilev, ... Communications Engineering 2 (1), 5, 2023 | 10 | 2023 |
| Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices M Jech, AM El-Sayed, S Tyaginov, D Waldhör, F Bouakline, P Saalfrank, ... Physical Review Applied 16 (1), 014026, 2021 | 10 | 2021 |
| Observation of Rich Defect Dynamics in Monolayer MoS2 H Ravichandran, T Knobloch, A Pannone, A Karl, B Stampfer, D Waldhoer, ... ACS nano 17 (15), 14449-14460, 2023 | 9 | 2023 |
| Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures T Knobloch, J Michl, D Waldhoer, YY Illarionov, B Stampfer, A Grill, ... 2020 Device Research Conference (DRC) 78, 52-53, 2020 | 9 | 2020 |
| Building robust machine learning force fields by composite Gaussian approximation potentials D Milardovich, D Waldhoer, M Jech, AMB El-Sayed, T Grasser Solid-State Electronics 200, 108529, 2023 | 8 | 2023 |
| Efficient Modeling of Charge Trapping at Cryogenic Temperatures--Part II: Experimental J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ... IEEE Transactions on Electron Devices 68 (12), 6372 - 6378, 2021 | 8 | 2021 |
| Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking J Franco, JF de Marneffe, A Vandooren, Y Kimura, L Nyns, Z Wu, ... 2020 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2020 | 8 | 2020 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEVerified email at iue.tuwien.ac.at
