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Dominic Waldhör
Dominic Waldhör
University Assistant, Institute for Microelectronics, TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
Toward automated defect extraction from bias temperature instability measurements
D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ...
IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021
312021
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ...
Advanced Materials, 2201082, 2022
302022
Physical modeling of charge trapping in 4H-SiC DMOSFET technologies
C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ...
IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021
292021
Atomistic modeling of oxide defects
D Waldhoer, AMB El-Sayed, Y Wimmer, M Waltl, T Grasser
Noise in Nanoscale Semiconductor Devices, 609-648, 2020
142020
Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture
C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
Microelectronics Reliability 139, 114801, 2022
122022
Single-versus multi-step trap assisted tunneling currents—Part I: Theory
C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ...
IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022
122022
Comphy v3.0 - A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ...
Microelectronics Reliability 146, 115004, 2023
112023
Single-versus multi-step trap assisted tunneling currents—Part II: The role of polarons
C Schleich, D Waldhör, AM El-Sayed, K Tselios, B Kaczer, T Grasser, ...
IEEE Transactions on Electron Devices 69 (8), 4486-4493, 2022
102022
Evidence of tunneling driven random telegraph noise in cryo-CMOS
J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021
102021
Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices
M Jech, AM El-Sayed, S Tyaginov, D Waldhör, F Bouakline, P Saalfrank, ...
Physical Review Applied 16 (1), 014026, 2021
102021
An ab initio study on resistance switching in hexagonal boron nitride
F Ducry, D Waldhoer, T Knobloch, M Csontos, N Jimenez Olalla, ...
npj 2D Materials and Applications 6 (1), 58, 2022
82022
Machine learning interatomic potential for silicon-nitride (Si3N4) by active learning
D Milardovich, C Wilhelmer, D Waldhoer, L Cvitkovich, G Sivaraman, ...
The Journal of Chemical Physics 158 (19), 2023
72023
Efficient Modeling of Charge Trapping at Cryogenic Temperatures--Part I: Theory
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6365 - 6371, 2021
72021
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
J Franco, JF de Marneffe, A Vandooren, Y Kimura, L Nyns, Z Wu, ...
2020 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2020
62020
Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures
T Knobloch, J Michl, D Waldhoer, YY Illarionov, B Stampfer, A Grill, ...
2020 Device Research Conference (DRC) 78, 52-53, 2020
62020
Building robust machine learning force fields by composite Gaussian approximation potentials
D Milardovich, D Waldhoer, M Jech, AMB El-Sayed, T Grasser
Solid-State Electronics 200, 108529, 2023
52023
Efficient Modeling of Charge Trapping at Cryogenic Temperatures--Part II: Experimental
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6372 - 6378, 2021
52021
Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors
MW Feil, H Reisinger, A Kabakow, T Aichinger, C Schleich, A Vasilev, ...
Communications Engineering 2 (1), 5, 2023
42023
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network
C Wilhelmer, M Jech, D Waldhoer, AMB El-Sayed, L Cvitkovich, T Grasser
2021 European Conference on Solid-State Device Research (ESSDERC), 2021
42021
Impact of single-defects on the variability of CMOS inverter circuits
M Waltl, D Waldhoer, K Tselios, B Stampfer, C Schleich, G Rzepa, ...
Microelectronics Reliability 126, 114275, 2021
42021
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