Tobias Schulz
Tobias Schulz
Leibniz Institute for Crystal Growth
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On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
On the nature and temperature dependence of the fundamental band gap of In2O3
K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN
T Markurt, L Lymperakis, J Neugebauer, P Drechsel, P Stauss, T Schulz, ...
Physical review letters 110 (3), 036103, 2013
Ultraviolet luminescence in AlN
T Schulz, M Albrecht, K Irmscher, C Hartmann, J Wollweber, R Fornari
physica status solidi (b) 248 (6), 1513-1518, 2011
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied Physics Express 8 (1), 011101, 2014
Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
S Fritze, P Drechsel, P Stauss, P Rode, T Markurt, T Schulz, M Albrecht, ...
Journal of Applied Physics 111 (12), 124505, 2012
The discrepancies between theory and experiment in the optical emission of monolayer In (Ga) N quantum wells revisited by transmission electron microscopy
T Suski, T Schulz, M Albrecht, XQ Wang, I Gorczyca, K Skrobas, ...
Applied Physics Letters 104 (18), 182103, 2014
Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
T Schulz, T Remmele, T Markurt, M Korytov, M Albrecht
Journal of Applied Physics 112 (3), 033106, 2012
Impact of buffer growth on crystalline quality of GaN grown on Si (111) substrates
P Drechsel, P Stauss, W Bergbauer, P Rode, S Fritze, A Krost, T Markurt, ...
physica status solidi (a) 209 (3), 427-430, 2012
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
Effect of heat treatment on properties of melt-grown bulk In 2 O 3 single crystals
Z Galazka, K Irmscher, M Pietsch, T Schulz, R Uecker, D Klimm, R Fornari
CrystEngComm 15 (12), 2220-2226, 2013
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 225308, 2016
Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide
M Albrecht, R Schewski, K Irmscher, Z Galazka, T Markurt, M Naumann, ...
Journal of Applied Physics 115 (5), 053504, 2014
Compensating defects in Si-doped AlN bulk crystals
K Irmscher, T Schulz, M Albrecht, C Hartmann, J Wollweber, R Fornari
Physica B: Condensed Matter 401, 323-326, 2007
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ...
Physical Review Materials 2 (1), 011601, 2018
Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
S Sintonen, P Kivisaari, S Pimputkar, S Suihkonen, T Schulz, JS Speck, ...
Journal of Crystal Growth 456, 43-50, 2016
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ...
Physical Review B 92 (23), 235439, 2015
n‐type conductivity in sublimation‐grown AlN bulk crystals
T Schulz, K Irmscher, M Albrecht, C Hartmann, J Wollweber, R Fornari
physica status solidi (RRL)–Rapid Research Letters 1 (4), 147-149, 2007
In/GaN(0001)- adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices
C Chèze, F Feix, M Anikeeva, T Schulz, M Albrecht, H Riechert, O Brandt, ...
Applied Physics Letters 110 (7), 072104, 2017
Investigation of interface abruptness and In content in (In, Ga) N/GaN superlattices
C Chèze, M Siekacz, F Isa, B Jenichen, F Feix, J Buller, T Schulz, ...
Journal of Applied Physics 120 (12), 125307, 2016
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