| High-power low-droop violet semipolar (303¯ 1¯) InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ... Applied Physics Letters 105 (17), 171106, 2014 | 68 | 2014 |
| Dynamic characteristics of 410 nm semipolar (202¯ 1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz C Lee, C Zhang, DL Becerra, S Lee, CA Forman, SH Oh, RM Farrell, ... Applied Physics Letters 109 (10), 101104, 2016 | 41 | 2016 |
| High spatial uniformity of photoluminescence spectra in semipolar (202 1) plane InGaN/GaN quantum wells K Gelžinytė, R Ivanov, S Marcinkevičius, Y Zhao, DL Becerra, ... Journal of Applied Physics 117 (2), 023111, 2015 | 38 | 2015 |
| Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯ 1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars Optics Express 26 (2), 1564-1572, 2018 | 37 | 2018 |
| Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating H Zhang, DA Cohen, P Chan, MS Wong, S Mehari, DL Becerra, ... Optics Letters 44 (12), 3106-3109, 2019 | 32 | 2019 |
| Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion … DL Becerra, LY Kuritzky, J Nedy, A Saud Abbas, A Pourhashemi, ... Applied Physics Letters 108 (9), 091106, 2016 | 28 | 2016 |
| Impact of carrier localization on radiative recombination times in semipolar (202¯ 1) plane InGaN/GaN quantum wells R Ivanov, S Marcinkevičius, Y Zhao, DL Becerra, S Nakamura, ... Applied Physics Letters 107 (21), 211109, 2015 | 28 | 2015 |
| Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN LY Kuritzky, DL Becerra, AS Abbas, J Nedy, S Nakamura, SP DenBaars, ... Semiconductor Science and Technology 31 (7), 075008, 2016 | 24 | 2016 |
| Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes SW Hamdy, EC Young, AI Alhassan, DL Becerra, SP DenBaars, JS Speck, ... Optics express 27 (6), 8327-8334, 2019 | 18 | 2019 |
| Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture L Megalini, DL Becerra, RM Farrell, A Pourhashemi, JS Speck, ... Applied Physics Express 8 (4), 042701, 2015 | 17 | 2015 |
| Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars Japanese Journal of Applied Physics 58 (2), 020902, 2019 | 15 | 2019 |
| Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence TK Uždavinys, DL Becerra, R Ivanov, SP DenBaars, S Nakamura, ... Optical Materials Express 7 (9), 3116-3123, 2017 | 14 | 2017 |
| Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization DL Becerra, DA Cohen, S Mehari, SP DenBaars, S Nakamura Journal of Crystal Growth 507, 118-123, 2019 | 9 | 2019 |
| CW operation of high-power blue laser diodes with polished facets on semi-polar (20 2¯ 1¯) GaN substrates A Pourhashemi, RM Farrell, DA Cohen, DL Becerra, SP DenBaars, ... Electronics Letters 52 (24), 2003-2005, 2016 | 8 | 2016 |
| Effects of active region design on gain and carrier injection and transport of CW semipolar InGaN laser diodes DL Becerra, DA Cohen, RM Farrell, SP DenBaars, S Nakamura Applied Physics Express 9 (9), 092104, 2016 | 8 | 2016 |
| High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication C Lee, C Zhang, D Becerra, S Lee, SH Oh, RM Farrell, JS Speck, ... 2016 IEEE Photonics Conference (IPC), 809-810, 2016 | 7 | 2016 |
| Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯ 1) plane InGaN/GaN quantum wells MD Mensi, DL Becerra, R Ivanov, S Marcinkevičius, S Nakamura, ... Optical Materials Express 6 (1), 39-45, 2016 | 7 | 2016 |
| Semipolar III-nitride laser diodes for solid-state lighting S Mehari, DA Cohen, DL Becerra, H Zhang, C Weisbuch, JS Speck, ... Novel In-Plane Semiconductor Lasers XVIII 10939, 45-50, 2019 | 5 | 2019 |
| High efficiency semipolar III-nitride lasers for solid state lighting DL Becerra, DA Cohen, RM Farrell, SP DenBaars, S Nakamura 2016 International Semiconductor Laser Conference (ISLC), 1-2, 2016 | 1 | 2016 |
| High-speed performance of III-nitride 410 nm ridge laser diode on (2021) plane for visible light communication C Lee, C Zhang, DL Becerra, S Lee, RM Farrell, JS Speck, S Nakamura, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
