Kadir Abdul
Kadir Abdul
Singapore-MIT Alliance for Research and Technology
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα smart.mit.edu
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Παρατίθεται από
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Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ...
Applied Physics Letters 101 (12), 121919, 2012
442012
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes
S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ...
Advanced Functional Materials 21 (20), 3828-3835, 2011
412011
Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor
A Kadir, T Ganguli, MR Gokhale, AP Shah, SS Chandvankar, BM Arora, ...
Journal of crystal growth 298, 403-408, 2007
292007
Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system
A Kadir, CC Huang, KE Kian Lee, EA Fitzgerald, SJ Chua
Applied Physics Letters 105 (23), 232113, 2014
232014
Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide
A Kadir, S Mukhopadhyay, T Ganguli, C Galande, MR Gokhale, BM Arora, ...
Solid state communications 146 (9-10), 361-364, 2008
232008
The role of hydrostatic stress in determining the bandgap of InN epilayers
A Kadir, T Ganguli, R Kumar, MR Gokhale, AP Shah, S Ghosh, BM Arora, ...
Applied Physics Letters 91 (11), 111913, 2007
232007
Determination of InN–GaN heterostructure band offsets from internal photoemission measurements
ZH Mahmood, AP Shah, A Kadir, MR Gokhale, S Ghosh, A Bhattacharya, ...
Applied Physics Letters 91 (15), 152108, 2007
212007
Alloy disorder effects on the room temperature optical properties of quantum wells
B Bansal, A Kadir, A Bhattacharya, BM Arora, R Bhat
Applied physics letters 89 (3), 032110, 2006
182006
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
M Pristovsek, A Kadir, C Meissner, T Schwaner, M Leyer, J Stellmach, ...
Journal of crystal growth 372, 65-72, 2013
142013
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ...
Journal of crystal growth 315 (1), 233-237, 2011
142011
MOVPE growth of semipolar (112¯ 2) Al1− xInxN across the alloy composition range (0≤ x≤ 0.55)
N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ...
Journal of Crystal Growth 411, 106-109, 2015
132015
Photoluminescence from localized states in disordered indium nitride
B Bansal, A Kadir, A Bhattacharya, VV Moshchalkov
Applied physics letters 93 (2), 021113, 2008
132008
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
A Kadir, C Meissner, T Schwaner, M Pristovsek, M Kneissl
Journal of crystal growth 334 (1), 40-45, 2011
122011
Charge deep level transient spectroscopy of electron traps in MOVPE grown n‐GaN on sapphire
ZH Mahmood, AP Shah, A Kadir, MR Gokhale, A Bhattacharya, BM Arora
physica status solidi (b) 245 (11), 2567-2571, 2008
122008
Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
M Pristovsek, A Kadir, C Meissner, T Schwaner, M Leyer, M Kneissl
Journal of Applied Physics 110 (7), 073527, 2011
112011
Microstructure of InN epilayers deposited in a close-coupled showerhead reactor
T Ganguli, A Kadir, M Gokhale, R Kumar, AP Shah, BM Arora, ...
Journal of Crystal Growth 310 (23), 4942-4946, 2008
102008
Surface transitions during InGaN growth on GaN (0001) in metal–organic vapor phase epitaxy
M Pristovsek, A Kadir, M Kneissl
Japanese Journal of Applied Physics 52 (8S), 08JB23, 2013
72013
Optimization of a-plane (112¯ 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (11¯ 02) sapphire
MR Laskar, A Kadir, AA Rahman, AP Shah, N Hatui, MR Gokhale, ...
Journal of crystal growth 312 (14), 2033-2037, 2010
72010
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy
N Lobo, A Kadir, MR Laskar, AP Shah, MR Gokhale, AA Rahman, ...
Journal of Crystal Growth 310 (23), 4747-4750, 2008
72008
MOVPE growth and characterization of InN/GaN single and multi-quantum well structures
A Kadir, MR Gokhale, A Bhattacharya, A Pretorius, A Rosenauer
Journal of Crystal Growth 311 (1), 95-98, 2008
52008
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