| Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ... Applied Physics Letters 97, 143502, 2010 | 142 | 2010 |
| Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ... Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010 | 94 | 2010 |
| Demonstration of In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 near broken-gap tunnel FET with I ON= 740ìA/ìm, G M= 70ìS/ìm and gigahertz switching performance at V Ds= 0.5 V R Bijesh, H Liu, H Madan, D Mohata, W Li, NV Nguyen, D Gundlach, ... 2013 IEEE International Electron Devices Meeting, 28.2. 1-28.2. 4, 2013 | 74 | 2013 |
| Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition H Madan, M Jerry, A Pogrebnyakov, T Mayer, S Datta ACS nano 9 (2), 2009-2017, 2015 | 71 | 2015 |
| Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for … R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ... 2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015 | 56 | 2015 |
| 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer H Madan, HT Zhang, M Jerry, D Mukherjee, N Alem, R Engel-Herbert, ... 2015 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2015 | 53 | 2015 |
| Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET CD Young, MO Baykan, A Agrawal, H Madan, K Akarvardar, C Hobbs, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 18-19, 2011 | 35 | 2011 |
| Asymmetric tunnel field-effect transistors as frequency multipliers H Madan, V Saripalli, H Liu, S Datta IEEE electron device letters 33 (11), 1547-1549, 2012 | 32 | 2012 |
| Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide H Madan, MJ Hollander, M LaBella, R Cavalero, D Snyder, JA Robinson, ... 2012 International Electron Devices Meeting, 4.3. 1-4.3. 4, 2012 | 29 | 2012 |
| Advanced composite high-ê gate stack for mixed anion arsenide-antimonide quantum well transistors A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ... 2010 International Electron Devices Meeting, 6.3. 1-6.3. 4, 2010 | 29 | 2010 |
| Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3dielectric A Ali, HS Madan, AP Kirk, RM Wallace, DA Zhao, DA Mourey, M Hudait, ... 68th Device Research Conference, 27-30, 2010 | 28 | 2010 |
| Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ... IEEE transactions on electron devices 58 (5), 1397-1403, 2011 | 27 | 2011 |
| Enhancement-mode antimonide quantum-well MOSFETs with high electron mobility and gigahertz small-signal switching performance A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ... IEEE electron device letters 32 (12), 1689-1691, 2011 | 26 | 2011 |
| Effect of interface states on the performance of antimonide nMOSFETs A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta IEEE electron device letters 34 (3), 360-362, 2013 | 15 | 2013 |
| Performance and variability in multi-VTFinFETs using fin doping K Akarvardar, CD Young, D Veksler, KW Ang, I Ok, M Rodgers, V Kaushik, ... Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012 | 13 | 2012 |
| Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics H Madan, MJ Hollander, JA Robinson, S Datta 70th Device Research Conference, 181-182, 2012 | 12 | 2012 |
| Demonstration of InGaAs/GaAsSb near broken-gap tunnel FET with ION= 740 ìA/ìm, Gm= 700 ìS/ìm and gigahertz switching performance at VDS= 0. 5 V R Bijesh, H Liu, H Madan, D Mohata, W Li, NV Nguyen Proc. IEEE Int. Electron Devices Meeting (IEDM), 28.2, 2013 | 11 | 2013 |
| Extraction of interface state density in oxide/III–V gate stacks D Veksler, G Bersuker, H Madan, L Morassi, G Verzellesi Semiconductor Science and Technology 30 (6), 065013, 2015 | 10 | 2015 |
| Short-channel graphene nanoribbon transistors with enhanced symmetry between p-and n-branches MJ Hollander, H Madan, N Shukla, DA Snyder, JA Robinson, S Datta Applied Physics Express 7 (5), 055103, 2014 | 10 | 2014 |
| Analysis and benchmarking of graphene based RF low noise amplifiers H Madan, MJ Hollander, JA Robinson, S Datta 71st Device Research Conference, 41-42, 2013 | 10 | 2013 |
Ashkar AliIntel CorporationVerified email at psu.edu
