Παρακολούθηση
Michael Kneissl
Michael Kneissl
Professor, Institute of Solid State Physics, TU Berlin, Germany
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα physik.tu-berlin.de - Αρχική σελίδα
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Παρατίθεται από
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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
9212019
Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ...
Semiconductor Science and Technology 26 (1), 014036, 2010
7852010
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection
MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel
Water research 45 (3), 1481-1489, 2011
5102011
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
4681999
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
3612020
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
GD Chern, HE Tureci, AD Stone, RK Chang, M Kneissl, NM Johnson
Applied Physics Letters 83 (9), 1710-1712, 2003
3402003
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
TJ Cervantes, LT Romano, MA Kneissl
US Patent 6,379,985, 2002
2982002
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
MA Kneissl
US Patent 7,751,455, 2010
2632010
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
2552000
III-nitride ultraviolet emitters: Technology and applications
M Kneissl, J Rass
Springer, 2015
2512015
Metastability of oxygen donors in AlGaN
MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ...
Physical Review Letters 80 (18), 4008, 1998
2251998
III-Nitride ultraviolet emitters
M Kneissl, J Rass
Springer Series in Materials Science, 2016
2172016
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
2062018
Method for nitride based laser diode with growth substrate removed using an intermediate substrate
MA Kneissl, DP Bour, P Mei, LT Romano
US Patent 6,365,429, 2002
1992002
Ultraviolet semiconductor laser diodes on bulk AlN
M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ...
Journal of Applied Physics 101 (12), 2007
1982007
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
1962003
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 2012
1942012
Method of fabricating GAN semiconductor structures using laser-assisted epitaxial liftoff
CL Chua, MA Kneissl, DP Bour
US Patent 6,455,340, 2002
1932002
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes
T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ...
Applied Physics Letters 97 (17), 2010
1892010
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ...
Semiconductor science and technology 27 (2), 024014, 2012
1732012
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