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Puneet Srivastava
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Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage
P Srivastava, J Das, D Visalli, J Derluyn, M Van Hove, PE Malinowski, ...
IEEE Electron Device Letters 31 (8), 851-853, 2010
2592010
Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015
1562015
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-Buffer Thickness by Local Substrate Removal
P Srivastava, J Das, D Visalli, M Van Hove, PE Malinowski, D Marcon, ...
IEEE Electron Device Letters 32 (1), 30-32, 2010
1542010
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon (111) substrates with high electron mobility
K Cheng, H Liang, M Van Hove, K Geens, B De Jaeger, P Srivastava, ...
Applied Physics Express 5 (1), 011002, 2011
1412011
A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ...
2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010
1122010
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
D Visalli, M Van Hove, P Srivastava, J Derluyn, J Das, M Leys, S Degroote, ...
Applied Physics Letters 97 (11), 2010
752010
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
J Das, J Everts, J Van Den Keybus, M Van Hove, D Visalli, P Srivastava, ...
IEEE Electron Device Letters 32 (10), 1370-1372, 2011
672011
Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
522009
Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs
D Visalli, M Van Hove, J Derluyn, P Srivastava, D Marcon, J Das, MR Leys, ...
IEEE Transactions on electron devices 57 (12), 3333-3339, 2010
352010
Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
P Srivastava, H Oprins, M Van Hove, J Das, PE Malinowski, B Bakeroot, ...
2011 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2011
322011
SPECIAL SECTION ON 2011 PAPERS FROM THE SYMPOSIUM ON ELECTRICAL OVERSTRESS AND ELECTROSTATIC DISCHARGE EFFECTS
SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ...
28*2012
10 Ám pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection
PE Malinowski, JY Duboz, P De Moor, J John, K Minoglou, P Srivastava, ...
2010 International Electron Devices Meeting, 14.5. 1-14.5. 4, 2010
272010
Silicon substrate engineered high-voltage high-temperature GaN-DHFETs
P Srivastava, J Das, RP Mertens, G Borghs
IEEE transactions on electron devices 60 (7), 2217-2223, 2013
252013
GaN-based HEMTs tested under high temperature storage test
D Marcon, X Kang, J Viaene, M Van Hove, P Srivastava, S Decoutere, ...
Microelectronics Reliability 51 (9-11), 1717-1720, 2011
202011
AlGaN-on-Si-Based 10- Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
PE Malinowski, JY Duboz, P De Moor, J John, K Minoglou, P Srivastava, ...
IEEE electron device letters 32 (11), 1561-1563, 2011
192011
Investigation of light-induced deep-level defect activation at the AlN/Si interface
D Visalli, M Van Hove, M Leys, J Derluyn, E Simoen, P Srivastava, ...
Applied physics express 4 (9), 094101, 2011
142011
GaN-on-Si HEMTs for 50V RF applications
D Marcon, J Viaene, F Vanaverbeke, X Kang, S Lenci, S Stoffels, ...
2012 7th European Microwave Integrated Circuit Conference, 325-328, 2012
122012
GaN-on-Si for high-voltage applications
D Visalli, M Van Hove, P Srivastava, D Marcon, K Geens, X Kang, ...
ECS Transactions 41 (8), 101, 2011
122011
GaN-on-Si for power conversion
M Germain, J Derluyn, M Van Hove, F Medjdoub, J Das, D Marcon, ...
Proceedings of the International Conference on Compound Semiconductorá…, 2010
72010
Backside illuminated AlGaN‐on‐Si UV detectors integrated by high density flip‐chip bonding
PE Malinowski, JY Duboz, P De Moor, J John, K Minoglou, P Srivastava, ...
physica status solidi c 8 (7‐8), 2476-2478, 2011
62011
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