| Defect-related degradation of AlGaN-based UV-B LEDs D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, J Glaab, ... IEEE Transactions on Electron Devices 64 (1), 200-205, 2016 | 76 | 2016 |
| Degradation effects of the active region in UV-C light-emitting diodes J Glaab, J Haefke, J Ruschel, M Brendel, J Rass, T Kolbe, A Knauer, ... Journal of Applied Physics 123 (10), 2018 | 67 | 2018 |
| High-power UV-B LEDs with long lifetime J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ... Gallium Nitride Materials and Devices X 9363, 182-194, 2015 | 62 | 2015 |
| Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016 | 56 | 2016 |
| Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ... Journal of Crystal Growth 464, 185-189, 2017 | 49 | 2017 |
| Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ... Photonics Research 5 (2), A44-A51, 2017 | 45 | 2017 |
| Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN A Knauer, A Mogilatenko, S Hagedorn, J Enslin, T Wernicke, M Kneissl, ... physica status solidi (b) 253 (5), 809-813, 2016 | 45 | 2016 |
| Displacement Talbot lithography for nano-engineering of III-nitride materials PM Coulon, B Damilano, B Alloing, P Chausse, S Walde, J Enslin, ... Microsystems & Nanoengineering 5 (1), 52, 2019 | 44 | 2019 |
| High-current stress of UV-B (In) AlGaN-based LEDs: Defect-generation and diffusion processes D Monti, C De Santi, S Da Ruos, F Piva, J Glaab, J Rass, S Einfeldt, ... IEEE Transactions on Electron Devices 66 (8), 3387-3392, 2019 | 33 | 2019 |
| Localization of current-induced degradation effects in (InAlGa) N-based UV-B LEDs J Ruschel, J Glaab, M Brendel, J Rass, C Stölmacker, N Lobo-Ploch, ... Journal of Applied Physics 124 (8), 2018 | 31 | 2018 |
| Effect of the GaN: Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs N Susilo, J Enslin, L Sulmoni, M Guttmann, U Zeimer, T Wernicke, ... physica status solidi (a) 215 (10), 1700643, 2018 | 29 | 2018 |
| A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser F Hjort, J Enslin, M Cobet, MA Bergmann, J Gustavsson, T Kolbe, ... ACS photonics 8 (1), 135-141, 2020 | 24 | 2020 |
| Electrochemical etching of AlGaN for the realization of thin-film devices MA Bergmann, J Enslin, R Yapparov, F Hjort, B Wickman, ... Applied Physics Letters 115 (18), 2019 | 24 | 2019 |
| V-pit to truncated pyramid transition in AlGaN-based heterostructures A Mogilatenko, J Enslin, A Knauer, F Mehnke, K Bellmann, T Wernicke, ... Semiconductor Science and Technology 30 (11), 114010, 2015 | 23 | 2015 |
| Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics C Kuhn, M Martens, F Mehnke, J Enslin, P Schneider, C Reich, F Krueger, ... Journal of Physics D: Applied Physics 51 (41), 415101, 2018 | 21 | 2018 |
| Highly reflective p-contacts made of Pd-Al on deep ultraviolet light-emitting diodes HK Cho, I Ostermay, U Zeimer, J Enslin, T Wernicke, S Einfeldt, M Weyers, ... IEEE Photonics Technology Letters 29 (24), 2222-2225, 2017 | 21 | 2017 |
| Thin-film flip-chip UVB LEDs realized by electrochemical etching MA Bergmann, J Enslin, F Hjort, T Wernicke, M Kneissl, Å Haglund Applied Physics Letters 116 (12), 2020 | 16 | 2020 |
| Analysis of doping concentration and composition in wide bandgap AlGaN: Si by wavelength dispersive x-ray spectroscopy G Kusch, F Mehnke, J Enslin, PR Edwards, T Wernicke, M Kneissl, ... Semiconductor Science and Technology 32 (3), 035020, 2017 | 16 | 2017 |
| Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy HM Foronda, DA Hunter, M Pietsch, L Sulmoni, A Muhin, S Graupeter, ... Applied Physics Letters 117 (22), 2020 | 14 | 2020 |
| Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers J Enslin, A Knauer, A Mogilatenko, F Mehnke, M Martens, C Kuhn, ... physica status solidi (a) 216 (24), 1900682, 2019 | 13 | 2019 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, GermanyΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα physik.tu-berlin.de
