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Stanislav Tyaginov
Stanislav Tyaginov
principal researcher, imec
Verified email at imec.be
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Cited by
Cited by
Year
Predictive hot-carrier modeling of n-channel MOSFETs
M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
962014
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
832015
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
772010
Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor
MI Vexler, SE Tyaginov, AF Shulekin
Journal of Physics: Condensed Matter 17 (50), 8057, 2005
702005
Physics-based hot-carrier degradation modeling
SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser
ECS Transactions 35 (4), 321, 2011
592011
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
552013
Modeling of hot-carrier degradation: Physics and controversial issues
S Tyaginov, T Grasser
2012 IEEE International Integrated Reliability Workshop Final Report, 206-215, 2012
542012
Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs
S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser
2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014
452014
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
452011
Reliability and variability of advanced CMOS devices at cryogenic temperatures
A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
432020
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
432015
treatment of silicon-hydrogen bond rupture at interfaces
M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser
Physical Review B 100 (19), 195302, 2019
412019
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
402015
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
362011
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
M Bina, K Rupp, S Tyaginov, O Triebl, T Grasser
2012 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2012
342012
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
312017
Electrical characterization and modeling of the Au/CaF2/nSi (111) structures with high-quality tunnel-thin fluoride layer
MI Vexler, NS Sokolov, SM Suturin, AG Banshchikov, SE Tyaginov, ...
Journal of Applied Physics 105 (8), 2009
302009
Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress
I Starkov, H Enichlmair, S Tyaginov, T Grasser
2012 IEEE International Reliability Physics Symposium (IRPS), XT. 7.1-XT. 7.6, 2012
282012
Physical modeling of bias temperature instabilities in SiC MOSFETs
C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ...
2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019
272019
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
272010
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