Markus Pristovsek
Markus Pristovsek
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imass.nagoya-u.ac.jp - Αρχική σελίδα
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Atomic structure of InP (001)-(2× 4): A dimer reconstruction
WG Schmidt, F Bechstedt, N Esser, M Pristovsek, C Schultz, W Richter
Physical Review B 57 (23), 14596, 1998
1001998
The critical thickness of InGaN on (0 0 0 1) GaN
M Leyer, J Stellmach, C Meissner, M Pristovsek, M Kneissl
Journal of crystal growth 310 (23), 4913-4915, 2008
962008
(2× 4) GaP (001) surface: Atomic structure and optical anisotropy
AM Frisch, WG Schmidt, J Bernholc, M Pristovsek, N Esser, W Richter
Physical Review B 60 (4), 2488, 1999
711999
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
JT Zettler, K Haberland, M Zorn, M Pristovsek, W Richter, P Kurpas, ...
Journal of crystal growth 195 (1-4), 151-162, 1998
671998
GaP (001) and InP (001): Reflectance anisotropy and surface geometry
N Esser, WG Schmidt, J Bernholc, AM Frisch, P Vogt, M Zorn, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
571999
Surface processes before and during growth of GaAs (001)
K Ploska, JT Zettler, W Richter, J Jönsson, F Reinhardt, J Rumberg, ...
Journal of crystal growth 145 (1-4), 44-52, 1994
501994
Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
N Esser, U Resch-Esser, M Pristovsek, W Richter
Physical Review B 53 (20), R13257, 1996
451996
Orientation control of (11-22) and (10-1-3) GaN grown on (10-10) sapphire by metal-organic vapor phase epitaxy
S Ploch, M Frentrup, T Wernicke, M Pristovsek, M Weyers, M Kneissl
Journal of Crystal Growth 312 (15), 2171-2174, 2010
432010
Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs (001)
JT Zettler, T Wethkamp, M Zorn, M Pristovsek, C Meyne, K Ploska, ...
Applied physics letters 67 (25), 3783-3785, 1995
421995
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)
JT Zettler, J Rumberg, K Ploska, K Stahrenberg, M Pristovsek, W Richter, ...
physica status solidi (a) 152 (1), 35-47, 1995
421995
Crystal orientation of GaN layers on (1010) m‐plane sapphire
M Frentrup, S Ploch, M Pristovsek, M Kneissl
physica status solidi (b) 248 (3), 583-587, 2011
412011
Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 033526-033526-5, 2012
402012
Spectroscopic process sensors in MOVPE device production.
K Haberland, P Kurpas, M Pristovsek, JT Zettler, M Weyers, W Richter
Applied Physics A: Materials Science & Processing 68 (3), 1999
401999
Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1− xAs growth in MOVPE
K Haberland, A Kaluza, M Zorn, M Pristovsek, H Hardtdegen, M Weyers, ...
Journal of crystal growth 240 (1-2), 87-97, 2002
372002
Polarity determination of polar and semipolar and GaN layers by valence band photoemission spectroscopy
D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 173503, 2013
342013
Topography of (202¯ 1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
S Ploch, T Wernicke, J Thalmair, M Lohr, M Pristovsek, J Zweck, ...
Journal of crystal growth 356, 70-74, 2012
332012
MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire
J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl
Journal of crystal growth 355 (1), 59-62, 2012
322012
Growth of strained GaAsSb layers on GaAs (0 0 1) by MOVPE
M Pristovsek, M Zorn, U Zeimer, M Weyers
Journal of crystal growth 276 (3-4), 347-353, 2005
322005
Structure analysis of the Ga-stabilized GaAs (001)− c (8× 2) surface at high temperatures
A Ohtake, S Tsukamoto, M Pristovsek, N Koguchi, M Ozeki
Physical Review B 65 (23), 233311, 2002
322002
In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
H Hardtdegen, M Pristovsek, H Menhal, JT Zettler, W Richter, D Schmitz
Journal of crystal growth 195 (1-4), 211-216, 1998
321998
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