| Excitonic photoluminescence from Si-capped strained layers D Dutartre, G Brémond, A Souifi, T Benyattou Physical Review B 44 (20), 11525, 1991 | 131 | 1991 |
| Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001) J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ... Journal of applied physics 92 (1), 506-510, 2002 | 115 | 2002 |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 ìm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ... Journal of applied physics 95 (9), 4761-4766, 2004 | 110 | 2004 |
| Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi Nanotechnology 14 (12), 1272, 2003 | 107 | 2003 |
| The acceptor level of vanadium in III–V compounds B Clerjaud, C Naud, B Deveaud, B Lambert, B Plot, G Bremond, ... Journal of applied physics 58 (11), 4207-4215, 1985 | 86 | 1985 |
| Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ... The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013 | 84 | 2013 |
| Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ... Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003 | 81 | 2003 |
| Influence of the chemical properties of the substrate on silicon quantum dot nucleation F Mazen, T Baron, G Brémond, N Buffet, N Rochat, P Mur, MN Séméria Journal of the Electrochemical Society 150 (3), G203, 2003 | 68 | 2003 |
| Deep level spectroscopy in InP: Fe G Bremond, A Nouailhat, G Guillot, B Cockayne Electronics Letters 17 (1), 55-56, 1981 | 66 | 1981 |
| Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001) P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ... Journal of applied physics 95 (3), 1074-1080, 2004 | 63 | 2004 |
| Controlling the structural properties of single step, dip coated ZnO seed layers for growing perfectly aligned nanowire arrays S Guillemin, E Appert, H Roussel, B Doisneau, R Parize, T Boudou, ... The Journal of Physical Chemistry C 119 (37), 21694-21703, 2015 | 56 | 2015 |
| Using silicon nanostructures for the improvement of silicon solar cells' efficiency J De la Torre, G Bremond, M Lemiti, G Guillot, P Mur, N Buffet Thin Solid Films 511, 163-166, 2006 | 48 | 2006 |
| Electrical and optical characterisation of vanadium in 4H and 6H–SiC V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, ... Materials Science and Engineering: B 61, 248-252, 1999 | 47 | 1999 |
| Characterization of semiconducting iron disilicide obtained by LRP/CVD J Regolini, F Trincat, I Sagnes, Y Shapira, G Bremond, D Bensahel IEEE transactions on electron devices 39 (1), 200-201, 1992 | 47 | 1992 |
| Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ... Applied Physics Letters 79 (26), 4435-4437, 2001 | 46 | 2001 |
| Fe deep level optical spectroscopy in InP G Bremond, A Nouailhat, G Guillot, B Cockayne Solid State Communications 41 (6), 477-481, 1982 | 45 | 1982 |
| Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001) B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ... Physical Review B 66 (19), 193305, 2002 | 44 | 2002 |
| Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition G Bremond, A Souifi, T Benyattou, D Dutartre Thin Solid Films 222 (1-2), 60-68, 1992 | 44 | 1992 |
| Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices B Rezgui, A Sibai, T Nychyporuk, M Lemiti, G Brémond Journal of Luminescence 129 (12), 1744-1746, 2009 | 41 | 2009 |
| Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection P Fougeres, M Hage-Ali, JM Koebel, P Siffert, S Hassan, A Lusson, ... Journal of crystal growth 184, 1313-1318, 1998 | 39 | 1998 |
