| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 206 | 2018 |
| Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ... Photonics Research 8 (4), 589-594, 2020 | 62 | 2020 |
| MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs C Kuhn, L Sulmoni, M Guttmann, J Glaab, N Susilo, T Wernicke, ... Photonics Research 7 (5), B7-B11, 2019 | 61 | 2019 |
| Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities J Ruschel, J Glaab, N Susilo, S Hagedorn, S Walde, E Ziffer, HK Cho, ... Applied Physics Letters 117 (24), 2020 | 40 | 2020 |
| Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes S Hagedorn, S Walde, A Knauer, N Susilo, D Pacak, L Cancellara, ... physica status solidi (a) 217 (14), 1901022, 2020 | 40 | 2020 |
| Effect of the GaN: Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs N Susilo, J Enslin, L Sulmoni, M Guttmann, U Zeimer, T Wernicke, ... physica status solidi (a) 215 (10), 1700643, 2018 | 29 | 2018 |
| Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs M Guttmann, A Susilo, L Sulmoni, N Susilo, E Ziffer, T Wernicke, M Kneissl Journal of Physics D: Applied Physics 54 (33), 335101, 2021 | 22 | 2021 |
| Improving AlN crystal quality and strain management on nanopatterned sapphire substrates by high‐temperature annealing for UVC light‐emitting diodes S Hagedorn, S Walde, N Susilo, C Netzel, N Tillner, RS Unger, P Manley, ... physica status solidi (a) 217 (7), 1900796, 2020 | 21 | 2020 |
| AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ... Journal of Crystal Growth 531, 125343, 2020 | 20 | 2020 |
| Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction A Muhin, M Guttmann, C Kuhn, E Mickein, JR Aparici, E Ziffer, N Susilo, ... Applied Physics Letters 117 (25), 2020 | 17 | 2020 |
| Enhanced wall plug efficiency of AlGaN-based deep-UV LEDs using Mo/Al as p-contact HK Cho, N Susilo, M Guttmann, J Rass, I Ostermay, S Hagedorn, E Ziffer, ... IEEE Photonics Technology Letters 32 (14), 891-894, 2020 | 16 | 2020 |
| Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy HM Foronda, DA Hunter, M Pietsch, L Sulmoni, A Muhin, S Graupeter, ... Applied Physics Letters 117 (22), 2020 | 14 | 2020 |
| Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations N Roccato, F Piva, C De Santi, M Buffolo, M Fregolent, M Pilati, N Susilo, ... Applied Physics Letters 122 (16), 2023 | 13 | 2023 |
| Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs F Piva, M Grigoletto, R Brescancin, C De Santi, M Buffolo, J Ruschel, ... Applied Physics Letters 122 (15), 2023 | 9 | 2023 |
| Low resistance n-contact for UVC LEDs by a two-step plasma etching process HK Cho, JH Kang, L Sulmoni, K Kunkel, J Rass, N Susilo, T Wernicke, ... Semiconductor Science and Technology 35 (9), 095019, 2020 | 9 | 2020 |
| Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes F Römer, B Witzigmann, M Guttmann, N Susilo, T Wernicke, M Kneissl Physics and Simulation of Optoelectronic Devices XXVII 10912, 18-26, 2019 | 9 | 2019 |
| Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations F Piva, M Pilati, M Buffolo, N Roccato, N Susilo, D Hauer Vidal, A Muhin, ... Applied Physics Letters 122 (18), 2023 | 7 | 2023 |
| Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions S Tanaka, R Ishii, N Susilo, T Wernicke, M Kneissl, M Funato, ... Japanese Journal of Applied Physics 61 (11), 112002, 2022 | 7 | 2022 |
| Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin S Wu, M Guttmann, N Lobo-Ploch, F Gindele, N Susilo, A Knauer, T Kolbe, ... Semiconductor Science and Technology 37 (6), 065019, 2022 | 7 | 2022 |
| Photonics Res. 7 C Kuhn, L Sulmoni, M Guttmann, J Glaab, N Susilo, T Wernicke, ... B7, 2019 | 6 | 2019 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, GermanyΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα physik.tu-berlin.de
