Pascal Normand
Pascal Normand
INN /NCSR 'Demokritos' Greece
Verified email at - Homepage
Cited by
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Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures
S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ...
Nano Letters 3 (4), 533-536, 2003
Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy implantation and annealing
E Kapetanakis, P Normand, D Tsoukalas, K Beltsios, J Stoemenos, ...
Applied Physics Letters 77 (21), 3450-3452, 2000
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
Hybrid silicon–organic nanoparticle memory device
S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ...
Journal of Applied Physics 94 (8), 5234-5239, 2003
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material
D Tsoukalas, C Tsamis, P Normand
Journal of Applied Physics 89 (12), 7809-7813, 2001
Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
E Kapetanakis, P Normand, D Tsoukalas, K Beltsios
Applied physics letters 80 (15), 2794-2796, 2002
Recent advances in nanoparticle memories
D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand
Materials Science and Engineering: B 124, 93-101, 2005
Fabrication of single crystal Si cantilevers using a dry release process and application in a capacitive-type humidity sensor
S Chatzandroulis, A Tserepi, D Goustouridis, P Normand, D Tsoukalas
Microelectronic Engineering 61, 955-961, 2002
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories
GB Assayag, C Bonafos, M Carrada, A Claverie, P Normand, D Tsoukalas
Applied physics letters 82 (2), 200-202, 2003
Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates
E Makarona, E Kapetanakis, DM Velessiotis, A Douvas, P Argitis, ...
Microelectronic Engineering 85 (5-6), 1399-1402, 2008
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
Silicon self-diffusivity measurement in thermal by isotopic exchange
D Mathiot, JP Schunck, M Perego, M Fanciulli, P Normand, C Tsamis, ...
Journal of applied physics 94 (3), 2136-2138, 2003
Formation of 2‐D Arrays of Silicon Nanocrystals in Thin SiO2 Films by Very‐Low Energy Si+ Ion Implantation
P Normand, D Tsoukalas, E Kapetanakis, JA Van Den Berg, DG Armour, ...
Electrochemical and solid-state letters 1 (2), 88, 1998
Si and Ge nanocrystals for future memory devices
C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
MOS memory structures by very-low-energy-implanted Si in thin SiO2
P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
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