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Hans Reisinger
Hans Reisinger
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Year
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
5132011
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3712010
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
3592010
Analysis of NBTI degradation-and recovery-behavior based on ultra fast VT-measurements
H Reisinger, O Blank, W Heinrigs, A Muhlhoff, W Gustin, C Schlunder
2006 IEEE International Reliability Physics Symposium Proceedings, 448-453, 2006
3502006
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress
H Reisinger, T Grasser, W Gustin, C Schlünder
2010 IEEE International Reliability Physics Symposium, 7-15, 2010
2662010
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
2172011
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B 82 (24), 245318, 2010
1772010
Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures
H Bachhofer, H Reisinger, E Bertagnolli, H Von Philipsborn
Journal of Applied Physics 89 (5), 2791-2800, 2001
1762001
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'Connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1502007
Memory cell configuration and method for its fabrication
H Reisinger, R Stengl, F Hofmann, W Krautschneider, J Willer
US Patent 5,994,746, 1999
1481999
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1442009
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability
K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger
IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019
1382019
Recent advances in understanding the bias temperature instability
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
1322010
A novel capacitor technology based on porous silicon
V Lehmann, W Hönlein, H Reisinger, A Spitzer, H Wendt, J Willer
Thin Solid Films 276 (1-2), 138-142, 1996
1221996
Understanding and modeling AC BTI
H Reisinger, T Grasser, K Ermisch, H Nielen, W Gustin, C Schlünder
2011 International Reliability Physics Symposium, 6A. 1.1-6A. 1.8, 2011
1202011
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
1132014
A unified perspective of RTN and BTI
T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer
2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014
1132014
Optical shortpass filters based on macroporous silicon
V Lehmann, R Stengl, H Reisinger, R Detemple, W Theiss
Applied Physics Letters 78 (5), 589-591, 2001
1132001
The ‘permanent’component of NBTI: Composition and annealing
T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ...
2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011
1052011
A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models
H Reisinger, O Blank, W Heinrigs, W Gustin, C Schlunder
IEEE Transactions on Device and Materials Reliability 7 (1), 119-129, 2007
1052007
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