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Stephen W. Kaun
Stephen W. Kaun
Apeel Sciences
Verified email at apeelsciences.com
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Cited by
Year
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ...
Applied Physics Express 10 (4), 041102, 2017
2102017
β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
SW Kaun, F Wu, JS Speck
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (4 …, 2015
1512015
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck
Journal of applied physics 115 (19), 193702, 2014
1072014
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
992013
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
962013
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 223501, 2011
932011
Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
F Gao, B Lu, L Li, S Kaun, JS Speck, CV Thompson, T Palacios
Applied Physics Letters 99 (22), 223506, 2011
902011
Chlorine-based dry etching of β-Ga2O3
JE Hogan, SW Kaun, E Ahmadi, Y Oshima, JS Speck
Semiconductor Science and Technology 31 (6), 065006, 2016
842016
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors
SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 024101, 2011
832011
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
SW Kaun, MH Wong, UK Mishra, JS Speck
Semiconductor science and technology 28 (7), 074001, 2013
822013
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
SW Kaun, PG Burke, M Hoi Wong, ECH Kyle, UK Mishra, JS Speck
Applied Physics Letters 101 (26), 262102, 2012
752012
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
B Mazumder, SW Kaun, J Lu, S Keller, UK Mishra, JS Speck
Applied Physics Letters 102 (11), 111603, 2013
702013
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ...
Semiconductor Science and Technology 29 (4), 045011, 2014
572014
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Y Oshima, E Ahmadi, S Kaun, F Wu, JS Speck
Semiconductor Science and Technology 33 (1), 015013, 2017
432017
Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
ECH Kyle, SW Kaun, EC Young, JS Speck
Applied Physics Letters 106 (22), 222103, 2015
412015
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs
R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
402016
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
SW Kaun, B Mazumder, MN Fireman, ECH Kyle, UK Mishra, JS Speck
Semiconductor Science and Technology 30 (5), 055010, 2015
402015
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
SW Kaun, MH Wong, UK Mishra, JS Speck
Applied Physics Letters 100 (26), 262102, 2012
402012
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
392018
Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
C Hodges, N Killat, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, ...
Applied Physics Letters 100 (11), 112106, 2012
382012
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