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Carsten Hartmann
Carsten Hartmann
Leibniz-Institut für Kristallzüchtung (IKZ)
Verified email at ikz-berlin.de
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Cited by
Year
Performance characteristics of UV-C AlGaN based lasers grown on sapphire and bulk AlN substrates
M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ...
Photonics Technology Letters 26 (4), 342-345, 2014
1182014
Bulk AlN growth by physical vapour transport
C Hartmann, A Dittmar, J Wollweber, M Bickermann
Semiconductor Science and Technology 29 (8), 084002, 2014
1112014
Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals
C Hartmann, J Wollweber, A Dittmar, K Irmscher, A Kwasniewski, ...
Japanese Journal of Applied Physics 52 (8S), 08JA06, 2013
812013
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18, 3488-3497, 2016
802016
Ultraviolet luminescence in AlN
T Schulz, M Albrecht, K Irmscher, C Hartmann, J Wollweber, R Fornari
physica status solidi (b) 248 (6), 1513-1518, 2011
682011
Thermal conductivity of single-crystalline AlN
R Rounds, B Sarkar, A Klump, C Hartmann, T Nagashima, R Kirste, ...
Applied Physics Express 11 (7), 071001, 2018
592018
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
K Irmscher, C Hartmann, C Guguschev, M Pietsch, J Wollweber, ...
Journal of Applied Physics 114 (12), 2013
532013
Homoepitaxial seeding and growth of bulk AlN by sublimation
C Hartmann, J Wollweber, C Seitz, M Albrecht, R Fornari
Journal of crystal growth 310 (5), 930-934, 2008
452008
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
S Hagedorn, S Walde, A Knauer, N Susilo, D Pacak, L Cancellara, ...
physica status solidi (a), 1901022, 2020
402020
SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
C Hartmann, M Albrecht, J Wollweber, J Schuppang, U Juda, ...
Journal of crystal growth 344 (1), 19-26, 2012
342012
Favourable growth conditions for the preparation of bulk AlN single crystals by PVT
C Hartmann, L Matiwe, J Wollweber, I Gamov, K Irmscher, M Bickermann, ...
CrystEngComm, 2020
292020
The influence of point defects on the thermal conductivity of AlN crystals
R Rounds, B Sarkar, D Alden, Q Guo, A Klump, C Hartmann, ...
Journal of Applied Physics 123, 185107, 2018
292018
n‐type conductivity in sublimation‐grown AlN bulk crystals
T Schulz, K Irmscher, M Albrecht, C Hartmann, J Wollweber, R Fornari
physica status solidi (RRL)–Rapid Research Letters 1 (4), 147-149, 2007
232007
Compensating defects in Si-doped AlN bulk crystals
K Irmscher, T Schulz, M Albrecht, C Hartmann, J Wollweber, R Fornari
Physica B: Condensed Matter 401, 323-326, 2007
222007
Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species
C Guguschev, A Dittmar, E Moukhina, C Hartmann, S Golka, J Wollweber, ...
Journal of crystal growth 360, 185-188, 2012
212012
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ...
Journal of Crystal Growth 531, 125343, 2020
192020
Carbon pair defects in aluminum nitride
I Gamov, C Hartmann, J Wollweber, A Dittmar, T Straubinger, ...
Journal of Applied Physics 126, 215102, 2019
152019
Boron as an anti-surfactant in sublimation growth of AlN single crystals
M Albrecht, J Wollweber, M Rossberg, M Schmidbauer, C Hartmann, ...
Applied physics letters 88 (21), 2006
152006
High‐temperature Annealing and Patterned AlN/sapphire Interfaces
S Hagedorn, A Mogilatenko, S Walde, D Pacak, J Weinrich, C Hartmann, ...
physica status solidi (b), 2021
142021
Electromechanical losses in carbon-and oxygen-containing bulk AlN single crystals
I Kogut, C Hartmann, I Gamov, Y Suhak, M Schulz, S Schröder, ...
Solid State Ionics 343, 115072, 2019
132019
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Articles 1–20