Follow
woojong yu
woojong yu
Verified email at skku.edu - Homepage
Title
Cited by
Cited by
Year
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
WJ Yu, Y Liu, H Zhou, A Yin, Z Li, Y Huang, X Duan
Nature nanotechnology 8 (12), 952-958, 2013
10932013
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
WJ Yu, Z Li, H Zhou, Y Chen, Y Wang, Y Huang, X Duan
Nature materials 12 (3), 246-252, 2013
8712013
Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
H Zhou, WJ Yu, L Liu, R Cheng, Y Chen, X Huang, Y Liu, Y Wang, ...
Nature communications 4 (1), 1-8, 2013
6032013
Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors
SH Chae, WJ Yu, JJ Bae, DL Duong, D Perello, HY Jeong, QH Ta, TH Ly, ...
Nature materials 12 (5), 403-409, 2013
3162013
High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene
L Liu, H Zhou, R Cheng, WJ Yu, Y Liu, Y Chen, J Shaw, X Zhong, ...
ACS nano 6 (9), 8241-8249, 2012
2662012
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
QA Vu, YS Shin, YR Kim, VL Nguyen, WT Kang, H Kim, DH Luong, IM Lee, ...
Nature communications 7 (1), 1-8, 2016
2352016
Reduction-controlled viologen in bisolvent as an environmentally stable n-type dopant for carbon nanotubes
SM Kim, JH Jang, KK Kim, HK Park, JJ Bae, WJ Yu, IH Lee, G Kim, ...
Journal of the American Chemical Society 131 (1), 327-331, 2009
1982009
Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping
WJ Yu, L Liao, SH Chae, YH Lee, X Duan
Nano letters 11 (11), 4759-4763, 2011
1632011
Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate
WJ Yu, SY Lee, SH Chae, D Perello, GH Han, M Yun, YH Lee
Nano letters 11 (3), 1344-1350, 2011
1632011
Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity
QA Vu, JH Lee, VL Nguyen, YS Shin, SC Lim, K Lee, J Heo, S Park, K Kim, ...
Nano letters 17 (1), 453-459, 2017
1592017
Highly flexible electronics from scalable vertical thin film transistors
Y Liu, H Zhou, R Cheng, W Yu, Y Huang, X Duan
Nano letters 14 (3), 1413-1418, 2014
1452014
Ultra‐transparent, flexible single‐walled carbon nanotube non‐volatile memory device with an oxygen‐decorated graphene electrode
WJ Yu, SH Chae, SY Lee, DL Duong, YH Lee
Advanced Materials 23 (16), 1889-1893, 2011
1432011
Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors
WJ Yu, UJ Kim, BR Kang, IH Lee, EH Lee, YH Lee
Nano Letters 9 (4), 1401-1405, 2009
1262009
Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers
WJ Yu, QA Vu, H Oh, HG Nam, H Zhou, S Cha, JY Kim, A Carvalho, ...
Nature communications 7 (1), 1-9, 2016
1232016
Synthesis and systematic characterization of functionalized graphene sheets generated by thermal exfoliation at low temperature
M Jin, HK Jeong, TH Kim, KP So, Y Cui, WJ Yu, EJ Ra, YH Lee
Journal of Physics D: Applied Physics 43 (27), 275402, 2010
1152010
Graphene oxide thin film field effect transistors without reduction
M Jin, HK Jeong, WJ Yu, DJ Bae, BR Kang, YH Lee
Journal of Physics D: Applied Physics 42 (13), 135109, 2009
1142009
Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors
SY Lee, SW Lee, SM Kim, WJ Yu, YW Jo, YH Lee
Acs Nano 5 (3), 2369-2375, 2011
1032011
Self-selective van der Waals heterostructures for large scale memory array
L Sun, Y Zhang, G Han, G Hwang, J Jiang, B Joo, K Watanabe, ...
Nature communications 10 (1), 1-7, 2019
1022019
A high‐on/off‐ratio floating‐gate memristor array on a flexible substrate via CVD‐grown large‐area 2D layer stacking
QA Vu, H Kim, VL Nguyen, UY Won, S Adhikari, K Kim, YH Lee, WJ Yu
Advanced Materials 29 (44), 1703363, 2017
1022017
Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
QA Vu, S Fan, SH Lee, MK Joo, WJ Yu, YH Lee
2D Materials 5 (3), 031001, 2018
832018
The system can't perform the operation now. Try again later.
Articles 1–20