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Panagiotis Bousoulas
Panagiotis Bousoulas
Post-Doctoral Researcher
Verified email at mail.ntua.gr - Homepage
Title
Cited by
Cited by
Year
Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2–x-Based RRAM With Embedded Pt Nanocrystals
P Bousoulas, S Stathopoulos, D Tsialoukis, D Tsoukalas
IEEE Electron Device Letters 37 (7), 874-877, 2016
692016
Influence of oxygen content of room temperature TiO2− x deposited films for enhanced resistive switching memory performance
P Bousoulas, I Michelakaki, D Tsoukalas
Journal of Applied Physics 115 (3), 2014
592014
Engineering amorphous-crystalline interfaces in TiO2− x/TiO2− y-based bilayer structures for enhanced resistive switching and synaptic properties
P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ...
Journal of Applied Physics 120 (15), 2016
482016
Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics
P Bousoulas, I Michelakaki, E Skotadis, M Tsigkourakos, D Tsoukalas
IEEE Transactions on Electron Devices 64 (8), 3151-3158, 2017
472017
Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors
P Bousoulas, D Sakellaropoulos, C Papakonstantinopoulos, S Kitsios, ...
Nanotechnology 31 (45), 454002, 2020
372020
Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2− x-based memory devices through experiments and simulations
P Bousoulas, I Giannopoulos, P Asenov, I Karageorgiou, D Tsoukalas
Journal of Applied Physics 121 (9), 2017
362017
Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2− x thin films
P Bousoulas, I Michelakaki, D Tsoukalas
Thin Solid Films 571, 23-31, 2014
352014
Ultra‐Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2−x‐Based RRAM with Embedded Pt Nanocrystals
M Tsigkourakos, P Bousoulas, V Aslanidis, E Skotadis, D Tsoukalas
physica status solidi (a) 214 (12), 1700570, 2017
342017
Heavy metal ion detection using DNAzyme-modified platinum nanoparticle networks
E Skotadis, G Tsekenis, M Chatzipetrou, L Patsiouras, L Madianos, ...
Sensors and Actuators B: Chemical 239, 962-969, 2017
292017
Memory programming of TiO2− x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching
P Bousoulas, J Giannopoulos, K Giannakopoulos, P Dimitrakis, ...
Applied Surface Science 332, 55-61, 2015
292015
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
D Sakellaropoulos, P Bousoulas, G Nikas, C Arvanitis, E Bagakis, ...
Microelectronic Engineering 229, 111358, 2020
282020
Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2–x/TiO2–y-based bilayer structures
D Sakellaropoulos, P Bousoulas, D Tsoukalas
Journal of Applied Physics 126 (4), 2019
262019
Emulating artificial neuron and synaptic properties with SiO2-based memristive devices by tuning threshold and bipolar switching effects
P Bousoulas, M Panagopoulou, N Boukos, D Tsoukalas
Journal of Physics D: Applied Physics 54 (22), 225303, 2021
252021
Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering
P Bousoulas, D Sakellaropoulos, D Tsoukalas
Applied Physics Letters 118 (14), 2021
212021
Impact of Active Electrode on the Synaptic Properties of SiO2-Based Forming-Free Conductive Bridge Memory
D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ...
IEEE Transactions on Electron Devices 68 (4), 1598-1603, 2021
182021
Spatial Confinement Effects of Embedded Nanocrystals on Multibit and Synaptic Properties of Forming Free SiO2-Based Conductive Bridge Random Access Memory
D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ...
IEEE Electron Device Letters 41 (7), 1013-1016, 2020
182020
Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part II: Modeling
PB C Tsioustas, J Hadfield, V Aslanidis, S Limberopoulos, D Tsoukalas
IEEE Transactions on Electron Devices 69 (5), 2368 - 2376, 2022
17*2022
Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2‐x‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals
P Bousoulas, I Karageorgiou, V Aslanidis, K Giannakopoulos, ...
physica status solidi (a) 215 (3), 1700440, 2018
162018
Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles
I Michelakaki, P Bousoulas, S Stathopoulos, N Boukos, D Tsoukalas
Journal of Physics D: Applied Physics 50 (4), 045103, 2016
162016
Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles
P Bousoulas, C Papakonstantinopoulos, S Kitsios, K Moustakas, ...
Micromachines 12 (3), 306, 2021
142021
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