| Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2–x-Based RRAM With Embedded Pt Nanocrystals P Bousoulas, S Stathopoulos, D Tsialoukis, D Tsoukalas IEEE Electron Device Letters 37 (7), 874-877, 2016 | 76 | 2016 |
| Influence of oxygen content of room temperature TiO2− x deposited films for enhanced resistive switching memory performance P Bousoulas, I Michelakaki, D Tsoukalas Journal of Applied Physics 115 (3), 2014 | 61 | 2014 |
| Engineering amorphous-crystalline interfaces in TiO2− x/TiO2− y-based bilayer structures for enhanced resistive switching and synaptic properties P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ... Journal of Applied Physics 120 (15), 2016 | 58 | 2016 |
| Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics P Bousoulas, I Michelakaki, E Skotadis, M Tsigkourakos, D Tsoukalas IEEE Transactions on Electron Devices 64 (8), 3151-3158, 2017 | 51 | 2017 |
| Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors P Bousoulas, D Sakellaropoulos, C Papakonstantinopoulos, S Kitsios, ... Nanotechnology 31 (45), 454002, 2020 | 42 | 2020 |
| Ultra‐Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2−x‐Based RRAM with Embedded Pt Nanocrystals M Tsigkourakos, P Bousoulas, V Aslanidis, E Skotadis, D Tsoukalas physica status solidi (a) 214 (12), 1700570, 2017 | 41 | 2017 |
| Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2− x-based memory devices through experiments and simulations P Bousoulas, I Giannopoulos, P Asenov, I Karageorgiou, D Tsoukalas Journal of Applied Physics 121 (9), 2017 | 40 | 2017 |
| Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2− x thin films P Bousoulas, I Michelakaki, D Tsoukalas Thin Solid Films 571, 23-31, 2014 | 37 | 2014 |
| Heavy metal ion detection using DNAzyme-modified platinum nanoparticle networks E Skotadis, G Tsekenis, M Chatzipetrou, L Patsiouras, L Madianos, ... Sensors and Actuators B: Chemical 239, 962-969, 2017 | 31 | 2017 |
| Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices D Sakellaropoulos, P Bousoulas, G Nikas, C Arvanitis, E Bagakis, ... Microelectronic Engineering 229, 111358, 2020 | 29 | 2020 |
| Memory programming of TiO2− x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching P Bousoulas, J Giannopoulos, K Giannakopoulos, P Dimitrakis, ... Applied Surface Science 332, 55-61, 2015 | 29 | 2015 |
| Emulating artificial neuron and synaptic properties with SiO2-based memristive devices by tuning threshold and bipolar switching effects P Bousoulas, M Panagopoulou, N Boukos, D Tsoukalas Journal of Physics D: Applied Physics 54 (22), 225303, 2021 | 27 | 2021 |
| Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2–x/TiO2–y-based bilayer structures D Sakellaropoulos, P Bousoulas, D Tsoukalas Journal of Applied Physics 126 (4), 2019 | 27 | 2019 |
| Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part II: Modeling PB C Tsioustas, J Hadfield, V Aslanidis, S Limberopoulos, D Tsoukalas IEEE Transactions on Electron Devices 69 (5), 2368 - 2376, 2022 | 23* | 2022 |
| Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering P Bousoulas, D Sakellaropoulos, D Tsoukalas Applied Physics Letters 118 (14), 2021 | 23 | 2021 |
| Impact of Active Electrode on the Synaptic Properties of SiO2-Based Forming-Free Conductive Bridge Memory D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ... IEEE Transactions on Electron Devices 68 (4), 1598-1603, 2021 | 20 | 2021 |
| Spatial Confinement Effects of Embedded Nanocrystals on Multibit and Synaptic Properties of Forming Free SiO2-Based Conductive Bridge Random Access Memory D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ... IEEE Electron Device Letters 41 (7), 1013-1016, 2020 | 18 | 2020 |
| Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles I Michelakaki, P Bousoulas, S Stathopoulos, N Boukos, D Tsoukalas Journal of Physics D: Applied Physics 50 (4), 045103, 2016 | 17 | 2016 |
| Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles P Bousoulas, C Papakonstantinopoulos, S Kitsios, K Moustakas, ... Micromachines 12 (3), 306, 2021 | 15 | 2021 |
| Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2‐x‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals P Bousoulas, I Karageorgiou, V Aslanidis, K Giannakopoulos, ... physica status solidi (a) 215 (3), 1700440, 2018 | 15 | 2018 |
Dimitris TsoukalasProfessor at National Technical University of AthensVerified email at central.ntua.gr
