| TCAD device modelling and simulation of wide bandgap power semiconductors N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018 | 39 | 2018 |
| Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou Semiconductor Science and Technology 32 (10), 104009, 2017 | 27 | 2017 |
| Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ... 2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017 | 23 | 2017 |
| On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ... IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019 | 14 | 2019 |
| A comprehensive comparison of the static performance of commercial GaN-on-Si devices S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 10 | 2017 |
| A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes AE Arvanitopoulos, M Antoniou, MR Jennings, S Perkins, KN Gyftakis, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 54-65, 2019 | 6 | 2019 |
| Performance improvement of> 10kV SiC IGBTs with retrograde p-well A Tiwari, M Antoniou, N Lophitis, S Perkins, T Trajkovic, F Udrea Materials Science Forum 963, 639-642, 2019 | 6 | 2019 |
| 3C-SiC-on-Si MOSFETs: overcoming material technology limitations A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ... IEEE Transactions on Industry Applications 58 (1), 565-575, 2021 | 5 | 2021 |
| > 10kV 4H-SiC n-IGBTs for elevated temperature environments S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ... | 5 | 2018 |
| Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes A Arvanitopoulos, F Li, MR Jennings, S Perkins, K Gyftakis, P Mawby, ... IEEE Transactions on Industry Applications 57 (5), 5252-5263, 2021 | 4 | 2021 |
| Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, KN Gyftakis, ... 2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019 | 4 | 2019 |
| Experimental investigation and verification of traps affecting the performance of 3C-SiC-on-Si schottky barrier diodes A Arvanitopoulos, F Li, MR Jennings, S Perkins, KN Gyftakis, M Antoniou, ... 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 1941-1947, 2019 | 3 | 2019 |
| On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 3 | 2018 |
| Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes A Arvanitopoulos, S Perkins, KN Gyftakis, N Lophitis, MR Jennings, ... 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 3 | 2018 |
| Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ... 2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019 | 2 | 2019 |
| 3C-SiC material parameters for accurate TCAD modeling and simulation A Arvanitopoulos, S Perkins, KN Gyftakis, M Antoniou, N Lophitis The 10th International Conference on Silicon Epitaxy and Heterostructures …, 2017 | 2 | 2017 |
| On the development of the 3C-SiC Power Law and its applicability for the evaluation of termination structures A Arvanitopoulos, M Antoniou, MR Jennings, F Li, S Perkins, KN Gyftakis Proc. 14th Int. Seminar Power Semicond.,, 2018 | 1 | 2018 |
| An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices N Lophitis, S Perkins, A Arvanitopoulos, S Faramehr, P Igic 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | | 2022 |
| Improvement in transient performance of> 10kV SiC IGBT with an optimized retrograde p-well AK Tiwari, M Antoniou, S Perkins, N Lophitis, T Trajkovic, F Udrea International Conference on Silicon Carbide and Related Materials 2019, 2019 | | 2019 |
| Performance and Reliability of Commercial GaN-on-Si Power Devices S Perkins | | 2017 |
