Samuel Perkins
Samuel Perkins
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα uni.coventry.ac.uk
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Παρατίθεται από
Παρατίθεται από
Έτος
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
172017
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
132017
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
122018
> 10kV 4H-SiC n-IGBTs for Elevated Temperature Environments
S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ...
The 14th International Seminar on Power Semiconductors (ISPS 2018), 2018
52018
A comprehensive comparison of the static performance of commercial GaN-on-Si devices
S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
52017
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ...
IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019
42019
Performance improvement of> 10kV SiC IGBTs with retrograde p-well
AK Tiwari, M Antoniou, N Lophitis, S Perkins, T Trajkovic, F Udrea
Materials Science Forum 963, 639-642, 2019
22019
Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes
A Arvanitopoulos, S Perkins, KN Gyftakis, N Lophitis, MR Jennings, ...
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018
22018
A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
AE Arvanitopoulos, M Antoniou, MR Jennings, S Perkins, KN Gyftakis, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 54-65, 2019
12019
On the development of the 3C-SiC Power Law and its applicability for the evaluation of termination structures
A Arvanitopoulos, M Antoniou, MR Jennings, F Li, S Perkins, KN Gyftakis
Proc. 14th Int. Seminar Power Semicond.,, 2018
12018
3C-SiC material parameters for accurate TCAD modeling and simulation
A Arvanitopoulos, S Perkins, KN Gyftakis, M Antoniou, N Lophitis
The 10th International Conference on Silicon Epitaxy and Heterostructures …, 2017
12017
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations
A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ...
2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019
2019
Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs
S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, KN Gyftakis, ...
2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019
2019
Improvement in transient performance of> 10kV SiC IGBT with an optimized retrograde p-well
AK Tiwari, M Antoniou, S Perkins, N Lophitis, T Trajkovic, F Udrea
International Conference on Silicon Carbide and Related Materials 2019, 2019
2019
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures
S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018
2018
Performance and Reliability of Commercial GaN-on-Si Power Devices
S Perkins
2017
Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes
A Arvanitopoulos, F Li, MR Jennings, S Perkins, KN Gyftakis, M Antoniou, ...
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 1941-1947, 0
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