Evangelou E
Evangelou E
Associate Prof. of Physics, Dept of Physics, Univ. of Ioannina
Verified email at
Cited by
Cited by
Fermi-level pinning and charge neutrality level in germanium
A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou
Applied physics letters 89 (25), 252110, 2006
high- gate dielectrics on Ge (100) by atomic oxygen beam deposition
A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 032908, 2005
Electrical properties of and gate dielectrics for germanium metal-oxide-semiconductor devices
G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ...
Journal of Applied Physics 103 (1), 014506, 2008
Intrinsic carrier effects in –Ge metal–insulator–semiconductor capacitors
A Dimoulas, G Vellianitis, G Mavrou, EK Evangelou, A Sotiropoulos
Applied Physics Letters 86 (22), 223507, 2005
Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on
EK Evangelou, C Wiemer, M Fanciulli, M Sethu, W Cranton
Journal of Applied Physics 94 (1), 318-325, 2003
An evaluation of the Y2O3:Eu3+ scintillator for application in medical x‐ray detectors and image receptors
D Cavouras, I Kandarakis, GS Panayiotakis, EK Evangelou, CD Nomicos
Medical Physics 23 (12), 1965-1975, 1996
Modeling the fluorescent lifetime of
RM Ranson, E Evangelou, CB Thomas
Applied physics letters 72 (21), 2663-2664, 1998
Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature
Z Wang, V Kugler, U Helmersson, N Konofaos, EK Evangelou, S Nakao, ...
Applied Physics Letters 79 (10), 1513-1515, 2001
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films
S Logothetidis, P Patsalas, EK Evangelou, N Konofaos, I Tsiaoussis, ...
Materials Science and Engineering: B 109 (1-3), 69-73, 2004
Electrical characterization of the SiON/Si interface for applications on optical and MOS devices
N Konofaos, EK Evangelou
Semiconductor science and technology 18 (1), 56, 2002
Absolute efficiency of rare earth oxysulphide screens in reflection mode observation
GE Giakoumakis, CD Nomicos, EN Yiakoumakis, EK Evangelou
Physics in Medicine & Biology 35 (7), 1017, 1990
Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates
EK Evangelou, MS Rahman, A Dimoulas
IEEE transactions on electron devices 56 (3), 399-407, 2009
Extraction of Schottky diode (and p− n junction) parameters from I–V characteristics
EK Evangelou, L Papadimitriou, CA Dimitriades, GE Giakoumakis
Solid-state electronics 36 (11), 1633-1635, 1993
Suppressing the photocatalytic activity of zinc oxide electron-transport layer in nonfullerene organic solar cells with a pyrene-bodipy interlayer
A Soultati, A Verykios, S Panagiotakis, KK Armadorou, MI Haider, ...
ACS applied materials & interfaces 12 (19), 21961-21973, 2020
Interface engineering for Ge metal-oxide–semiconductor devices
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices
N Konofaos, EK Evangelou, X Aslanoglou, M Kokkoris, R Vlastou
Semiconductor science and technology 19 (1), 50, 2003
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
G Mavrou, SF Galata, A Sotiropoulos, P Tsipas, Y Panayiotatos, ...
Microelectronic engineering 84 (9-10), 2324-2327, 2007
Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering
EK Evangelou, N Konofaos, CB Thomas
Philosophical Magazine B 80 (3), 395-407, 2000
Characterisation of the BaTiO3/p-Si interface and applications
EK Evangelou, N Konofaos, MR Craven, WM Cranton, CB Thomas
Applied surface science 166 (1-4), 504-507, 2000
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors
EK Evangelou, G Mavrou, A Dimoulas, N Konofaos
Solid-state electronics 51 (1), 164-169, 2007
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