Evangelou E
Evangelou E
Associate Prof. of Physics, Dept of Physics, Univ. of Ioannina
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα uoi.gr
Παρατίθεται από
Παρατίθεται από
Fermi-level pinning and charge neutrality level in germanium
A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou
Applied physics letters 89 (25), 252110, 2006
high- gate dielectrics on Ge (100) by atomic oxygen beam deposition
A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 032908, 2005
Electrical properties of and gate dielectrics for germanium metal-oxide-semiconductor devices
G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ...
Journal of Applied Physics 103 (1), 014506, 2008
Intrinsic carrier effects in –Ge metal–insulator–semiconductor capacitors
A Dimoulas, G Vellianitis, G Mavrou, EK Evangelou, A Sotiropoulos
Applied Physics Letters 86 (22), 223507, 2005
An evaluation of the Y2O3:Eu3+ scintillator for application in medical x‐ray detectors and image receptors
D Cavouras, I Kandarakis, GS Panayiotakis, EK Evangelou, CD Nomicos
Medical physics 23 (12), 1965-1975, 1996
Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on
EK Evangelou, C Wiemer, M Fanciulli, M Sethu, W Cranton
Journal of applied physics 94 (1), 318-325, 2003
Modeling the fluorescent lifetime of
RM Ranson, E Evangelou, CB Thomas
Applied physics letters 72 (21), 2663-2664, 1998
Electrical characterization of the SiON/Si interface for applications on optical and MOS devices
N Konofaos, EK Evangelou
Semiconductor science and technology 18 (1), 56, 2002
Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature
Z Wang, V Kugler, U Helmersson, N Konofaos, EK Evangelou, S Nakao, ...
Applied Physics Letters 79 (10), 1513-1515, 2001
Absolute efficiency of rare earth oxysulphide screens in reflection mode observation
GE Giakoumakis, CD Nomicos, EN Yiakoumakis, EK Evangelou
Physics in Medicine & Biology 35 (7), 1017, 1990
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films
S Logothetidis, P Patsalas, EK Evangelou, N Konofaos, I Tsiaoussis, ...
Materials Science and Engineering: B 109 (1-3), 69-73, 2004
Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates
EK Evangelou, MS Rahman, A Dimoulas
IEEE transactions on electron devices 56 (3), 399-407, 2009
Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices
N Konofaos, EK Evangelou, X Aslanoglou, M Kokkoris, R Vlastou
Semiconductor science and technology 19 (1), 50, 2003
Extraction of Schottky diode (and p− n junction) parameters from I–V characteristics
EK Evangelou, L Papadimitriou, CA Dimitriades, GE Giakoumakis
Solid-state electronics 36 (11), 1633-1635, 1993
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
G Mavrou, SF Galata, A Sotiropoulos, P Tsipas, Y Panayiotatos, ...
Microelectronic engineering 84 (9-10), 2324-2327, 2007
Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering
EK Evangelou, N Konofaos, CB Thomas
Philosophical Magazine B 80 (3), 395-407, 2000
Interface engineering for Ge metal-oxide–semiconductor devices
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
Characterisation of the BaTiO3/p-Si interface and applications
EK Evangelou, N Konofaos, MR Craven, WM Cranton, CB Thomas
Applied surface science 166 (1-4), 504-507, 2000
Properties and density of states of the interface between silicon and carbon films rich in bonds
S Logothetidis, E Evangelou, N Konofaos
Journal of applied physics 82 (10), 5017-5020, 1997
Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate
MS Rahman, EK Evangelou, A Dimoulas, G Mavrou, S Galata
Journal of Applied Physics 103 (6), 064514, 2008
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