Fermi-level pinning and charge neutrality level in germanium A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou
Applied physics letters 89 (25), 2006
704 2006 HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 2005
185 2005 Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ...
Journal of Applied Physics 103 (1), 2008
141 2008 Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
105 2007 Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors A Dimoulas, G Vellianitis, G Mavrou, EK Evangelou, A Sotiropoulos
Applied Physics Letters 86 (22), 2005
81 2005 Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on EK Evangelou, C Wiemer, M Fanciulli, M Sethu, W Cranton
Journal of Applied Physics 94 (1), 318-325, 2003
80 2003 An evaluation of the Y2 O3 :Eu3+ scintillator for application in medical x‐ray detectors and image receptors D Cavouras, I Kandarakis, GS Panayiotakis, EK Evangelou, CD Nomicos
Medical Physics 23 (12), 1965-1975, 1996
78 1996 Modeling the fluorescent lifetime of RM Ranson, E Evangelou, CB Thomas
Applied physics letters 72 (21), 2663-2664, 1998
74 1998 Suppressing the photocatalytic activity of zinc oxide electron-transport layer in nonfullerene organic solar cells with a pyrene-bodipy interlayer A Soultati, A Verykios, S Panagiotakis, KK Armadorou, MI Haider, ...
ACS applied materials & interfaces 12 (19), 21961-21973, 2020
62 2020 Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature Z Wang, V Kugler, U Helmersson, N Konofaos, EK Evangelou, S Nakao, ...
Applied Physics Letters 79 (10), 1513-1515, 2001
60 2001 Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films S Logothetidis, P Patsalas, EK Evangelou, N Konofaos, I Tsiaoussis, ...
Materials Science and Engineering: B 109 (1-3), 69-73, 2004
55 2004 Electrical characterization of the SiON/Si interface for applications on optical and MOS devices N Konofaos, EK Evangelou
Semiconductor science and technology 18 (1), 56, 2002
52 2002 Absolute efficiency of rare earth oxysulphide screens in reflection mode observation GE Giakoumakis, CD Nomicos, EN Yiakoumakis, EK Evangelou
Physics in Medicine & Biology 35 (7), 1017, 1990
43 1990 Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates EK Evangelou, MS Rahman, A Dimoulas
IEEE transactions on electron devices 56 (3), 399-407, 2009
40 2009 Extraction of Schottky diode (and p− n junction) parameters from I–V characteristics EK Evangelou, L Papadimitriou, CA Dimitriades, GE Giakoumakis
Solid-state electronics 36 (11), 1633-1635, 1993
37 1993 Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices N Konofaos, EK Evangelou, X Aslanoglou, M Kokkoris, R Vlastou
Semiconductor science and technology 19 (1), 50, 2003
36 2003 Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric G Mavrou, SF Galata, A Sotiropoulos, P Tsipas, Y Panayiotatos, ...
Microelectronic engineering 84 (9-10), 2324-2327, 2007
34 2007 Properties of barium titanate (BaTiO3 ) thin films grown on silicon by rf magnetron sputtering EK Evangelou, N Konofaos, CB Thomas
Philosophical Magazine B 80 (3), 395-407, 2000
34 2000 Characterisation of the BaTiO3/p-Si interface and applications EK Evangelou, N Konofaos, MR Craven, WM Cranton, CB Thomas
Applied surface science 166 (1-4), 504-507, 2000
32 2000 Current transport mechanism in high-κ cerium oxide gate dielectrics grown on Germanium substrates MS Rahman, EK Evangelou, II Androulidakis, A Dimoulas
Electrochemical and Solid-State Letters 12 (5), H165, 2009
31 2009