Παρακολούθηση
Dimitrios Skarlatos
Dimitrios Skarlatos
Άγνωστη συνεργασία
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα physics.upatras.gr
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
1632003
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
1092004
Implantation and diffusion of phosphorous in germanium
A Chroneos, D Skarlatos, C Tsamis, A Christofi, DS McPhail, R Hung
Materials science in semiconductor processing 9 (4-5), 640-643, 2006
722006
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
692004
Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
N Ioannou, D Skarlatos, C Tsamis, CA Krontiras, SN Georga, A Christofi, ...
Applied Physics Letters 93 (10), 2008
622008
MOS memory structures by very-low-energy-implanted Si in thin SiO2
P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
492003
Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ...
Microelectronic engineering 73, 730-735, 2004
352004
Estimation of the number of interstitial atoms injected in silicon during thin oxide formation
D Skarlatos, M Omri, A Claverie, D Tsoukalas
Journal of the Electrochemical Society 146 (6), 2276, 1999
291999
Inert ambient annealing effect on MANOS capacitor memory characteristics
N Nikolaou, P Dimitrakis, P Normand, D Skarlatos, K Giannakopoulos, ...
Nanotechnology 26 (13), 134004, 2015
252015
ZrO2 and Al2O3 thin films on Ge (100) grown by ALD: An XPS investigation
L Sygellou, V Gianneta, N Xanthopoulos, D Skarlatos, S Georga, ...
Surface Science Spectra 18 (1), 58-67, 2011
242011
Measurements and analysis of the Epidaurus Ancient Theatre acoustics
S Psarras, P Hatziantoniou, M Kountouras, NA Tatlas, JN Mourjopoulos, ...
Acta Acustica United with Acustica 99 (1), 30-39, 2013
212013
Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes
M Vasilopoulou, S Kennou, S Ladas, SN Georga, M Botzakaki, ...
Organic Electronics 14 (1), 312-319, 2013
212013
Interfacial properties of ALD-deposited Al2O3/p-type germanium MOS structures: Influence of oxidized Ge interfacial layer dependent on Al2O3 thickness
M Botzakaki, A Kerasidou, L Sygellou, V Ioannou-Sougleridis, ...
ECS Solid State Letters 1 (2), P32, 2012
182012
Measurements and analysis of the acoustics of the ancient theatre of Epidaurus
S Vassilantonopoulos, P Hatziantoniou, NA Tatlas, T Zakynthinos, ...
Proceedings of EAA Conference on the Acoustics of Ancient Theaters, Patras …, 2011
182011
Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, D Tsoukalas, ...
Microelectronic engineering 67, 629-634, 2003
182003
Point defect injection during nitrous oxidation of silicon at low temperatures
D Skarlatos, D Tsoukalas, LF Giles, A Claverie
Journal of Applied Physics 87 (3), 1103-1109, 2000
182000
Strong diffusion suppression of low energy–implanted phosphorous in germanium by N2 co-implantation
C Thomidis, M Barozzi, M Bersani, V Ioannou-Sougleridis, NZ Vouroutzis, ...
ECS Solid State Letters 4 (6), P47, 2015
172015
Measurement and analysis of acoustics of Epidaurus theatre
S Vassilantonopoulos, T Zakynthinos, P Hatziantoniou, NA Tatlas, ...
Hellenic Institute of Acoustics Conference, Thessaloniki, 2004
172004
Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation
D Skarlatos, E Kapetanakis, P Normand, C Tsamis, M Perego, S Ferrari, ...
Journal of applied physics 96 (1), 300-309, 2004
152004
Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients
LF Giles, M Omri, B De Mauduit, A Claverie, D Skarlatos, D Tsoukalas, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
151999
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