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Franz Schanovsky
Franz Schanovsky
Global TCAD Solutions GmbH
Verified email at chello.at - Homepage
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Year
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
5132011
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
3592010
Recent advances in understanding the bias temperature instability
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
1322010
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
1132014
NBTI in nanoscale MOSFETs—The ultimate modeling benchmark
T Grasser, K Rott, H Reisinger, M Waltl, F Schanovsky, B Kaczer
IEEE Transactions on Electron Devices 61 (11), 3586-3593, 2014
722014
Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy
T Grasser, K Rott, H Reisinger, PJ Wagner, W Gös, F Schanovsky, M Waltl, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 2D. 2.1-2D. 2.7, 2013
602013
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
582018
Multiphonon hole trapping from first principles
F Schanovsky, W Gös, T Grasser
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
442011
Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations
M Karner, O Baumgartner, Z Stanojević, F Schanovsky, G Strof, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2016
322016
A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures
F Schanovsky, O Baumgartner, V Sverdlov, T Grasser
Journal of Computational Electronics 11 (3), 218-224, 2012
262012
An advanced description of oxide traps in MOS transistors and its relation to DFT
F Schanovsky, W Gös, T Grasser
Journal of computational electronics 9 (3), 135-140, 2010
242010
Advanced modeling of oxide defects
W Goes, F Schanovsky, T Grasser
Bias temperature instability for devices and circuits, 409-446, 2014
222014
The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors
S Santermans, F Schanovsky, M Gupta, G Hellings, M Heyns, W Van Roy, ...
ACS sensors 6 (3), 1049-1056, 2021
172021
On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability
F Schanovsky, T Grasser
2012 IEEE International Reliability Physics Symposium (IRPS), XT. 10.1-XT. 10.6, 2012
172012
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018
162018
Understanding the ISPP slope in charge trap flash memory and its impact on 3-D NAND scaling
D Verreck, A Arreghini, F Schanovsky, G Rzepa, Z Stanojevic, ...
2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021
132021
Understanding correlated drain and gate current fluctuations
W Goes, M Toledano-Luque, O Baumgartner, M Bina, F Schanovsky, ...
Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013
132013
A detailed evaluation of model defects as candidates for the bias temperature instability
F Schanovsky, O Baumgartner, W Goes, T Grasser
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
122013
Advanced modeling of oxide defects for random telegraph noise
W Goes, F Schanovsky, T Grasser, H Reisinger, B Kaczer
2011 21st International Conference on Noise and Fluctuations, 204-207, 2011
122011
Semi-automated extraction of the distribution of single defects for nMOS transistors
B Stampfer, F Schanovsky, T Grasser, M Waltl
Micromachines 11 (4), 446, 2020
102020
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