InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 ìm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ... Applied physics letters 74 (19), 2815-2817, 1999 | 512 | 1999 |
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ... Electronics Letters 36 (16), 1384-1385, 2000 | 344 | 2000 |
The role of Auger recombination in the temperature-dependent output characteristics of -doped 1.3 ìm quantum dot lasers S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ... Applied Physics Letters 85 (22), 5164-5166, 2004 | 307 | 2004 |
Quantum dot lasers: breakthrough in optoelectronics D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ... Thin solid films 367 (1-2), 235-249, 2000 | 288 | 2000 |
Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors MV Maximov, AF Tsatsul¢nikov, BV Volovik, DS Sizov, YM Shernyakov, ... Physical Review B 62 (24), 16671, 2000 | 256 | 2000 |
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ... Electronics Letters 39 (15), 1126-1128, 2003 | 214 | 2003 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ... Electronics Letters 38 (19), 1, 2002 | 194 | 2002 |
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ... Semiconductor science and technology 20 (5), 340, 2005 | 191 | 2005 |
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser EU Rafailov, MA Cataluna, W Sibbett, ND Il¢Inskaya, YM Zadiranov, ... Applied Physics Letters 87 (8), 081107, 2005 | 185 | 2005 |
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ... Semiconductors 43, 514-518, 2009 | 178 | 2009 |
Strain engineering of self-organized InAs quantum dots F Guffarth, R Heitz, A Schliwa, O Stier, NN Ledentsov, AR Kovsh, ... Physical Review B 64 (8), 085305, 2001 | 175 | 2001 |
1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ... Electronics Letters 35 (11), 898-900, 1999 | 172 | 1999 |
Hole and electron emission from InAs quantum dots CMA Kapteyn, M Lion, R Heitz, D Bimberg, PN Brunkov, BV Volovik, ... Applied Physics Letters 76 (12), 1573-1575, 2000 | 159 | 2000 |
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate AE Zhukov, AR Kovsh, VM Ustinov, YM Shernyakov, SS Mikhrin, ... IEEE Photonics Technology Letters 11 (11), 1345-1347, 1999 | 156 | 1999 |
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin, VM Ustinov, ... Applied physics letters 75 (13), 1926-1928, 1999 | 156 | 1999 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 ìm range with enhanced optical gain AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil¢ev, ... Journal of Crystal Growth 251 (1-4), 729-736, 2003 | 153 | 2003 |
35GHz mode-locking of 1.3 ìm quantum dot lasers M Kuntz, G Fiol, M Lämmlin, D Bimberg, MG Thompson, KT Tan, ... Applied Physics Letters 85 (5), 843-845, 2004 | 149 | 2004 |
Quantum dot laser with 75nm broad spectrum of emission A Kovsh, I Krestnikov, D Livshits, S Mikhrin, J Weimert, A Zhukov Optics letters 32 (7), 793-795, 2007 | 144 | 2007 |
Feedback sensitivity of 1.3 lm InAs/GaAs quantum dot lasers D O¢Brien, SP Hegarty, G Huyet, JG McInerney, T Kettler, M Laemmlin, ... RIN 140, 150, 2003 | 135 | 2003 |
Electronic structure of self-assembled InAs quantum dots in GaAs matrix PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ... Applied physics letters 73 (8), 1092-1094, 1998 | 125 | 1998 |